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ZnO/SrTiO3, ZnO/WO3, and ZnO/Zn2SnO4 Bilayer as Electron Transport Layers for Lead Sulfide Colloidal Quantum Dots Solar Cells
Small ( IF 13.0 ) Pub Date : 2024-09-09 , DOI: 10.1002/smll.202402500
Rabia Bashir 1 , Muhammad Kashif Bilal 1 , Amna Bashir 2 , Sana Ullah Asif 1 , Yicheng Peng 1
Affiliation  

In order to enhance the overall efficiency of colloidal quantum dots solar cells, it is crucial to suppress the recombination of charge carriers and minimize energy loss at the interfaces between the transparent electrode, electron transport layer (ETL), and colloidal quantum dots (CQDs) light-absorbing material. In the current study, ZnO/SrTiO3 (STO), ZnO/WO3 (TO), and ZnO/Zn2SnO4 (ZTO) bilayers are introduced as an ETL using a spin-coating technique. The ZTO interlayer exhibits a smoother surface with a root-mean-square (RMS) value of ≈ 3.28 nm compared to STO and TO interlayers, which enables it to cover the surface of the ITO/ZnO substrate entirely and helps to prevent direct contact between the CQDs absorber layer and the ITO/ZnO substrate, thereby effectively preventing efficient charge recombination at the interfaces of the ETL/CQDs. Furthermore, the ZTO interlayer possesses superior electron mobility, a higher visible light transmission, and a suitable energy band structure compared to STO and TO. These characteristics are advantageous for extracting charge carriers and facilitating electron transport. The PbS CQDs solar cell based on the ITO/ZnO/ZTO/PbS-FABr/PbS-EDT/NiO/Au device configuration exhibits the highest efficiency of 15.28%, which is significantly superior than the ITO/ZnO/PbS-FABr/PbS-EDT/NiO/Au solar cell device (PCE = 14.38%). This study is anticipated to offer a practical approach to develop ultrathin and compact ETL for highly efficient CQDSCs.

中文翻译:


ZnO/SrTiO3、ZnO/WO3 和 ZnO/Zn2SnO4 双层作为硫化铅胶体量子点太阳能电池的电子传递层



为了提高胶体量子点太阳能电池的整体效率,抑制电荷载流子的复合并最大限度地减少透明电极、电子传输层 (ETL) 和胶体量子点 (CQD) 吸光材料之间界面处的能量损失至关重要。在目前的研究中,使用旋涂技术将 ZnO/SrTiO3 (STO)、ZnO/WO3 (TO) 和 ZnO/Zn2SnO4 (ZTO) 双层作为 ETL 引入。与 STO 和 TO 中间膜相比,ZTO 中间膜表现出更光滑的表面,均方根 (RMS) 值为 ≈ 3.28 nm,这使其能够完全覆盖 ITO/ZnO 衬底的表面,并有助于防止 CQDs 吸收层与 ITO/ZnO 衬底之间的直接接触,从而有效防止 ETL/CQD 界面处的高效电荷复合。此外,与 STO 和 TO 相比,ZTO 中间层具有优异的电子迁移率、更高的可见光透射率和合适的能带结构。这些特性有利于提取电荷载流子和促进电子传输。基于 ITO/ZnO/ZTO/PbS-FABr/PbS-EDT/NiO/Au 器件配置的 PbS CQDs 太阳能电池表现出 15.28% 的最高效率,明显优于 ITO/ZnO/PbS-FABr/PbS-EDT/NiO/Au 太阳能电池器件 (PCE = 14.38%)。本研究有望为开发用于高效 CQDSCs 的超薄和紧凑型 ETL 提供一种实用方法。
更新日期:2024-09-09
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