Origin of Enhanced Photoelectrochemical Activity of the n-CdS/p-type Semiconductor Interface: Homojunction or Heterojunction?,Small

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Origin of Enhanced Photoelectrochemical Activity of the n-CdS/p-type Semiconductor Interface: Homojunction or Heterojunction?
Small ( IF 13.0 ) Pub Date : 2024-09-09 , DOI: 10.1002/smll.202405048
Sang Youn Chae _{1,

2} , Minki Jun ₃ , Noyoung Yoon _{4,

5} , Oh Shim Joo ₄ , Jin Young Kim ₃ , Eun Duck Park _{1,

6}

Affiliation

Surface engineering of photoelectrodes is considered critical for achieving efficient photoelectrochemical (PEC) cells, and various p-type materials have been investigated for use as photoelectrodes. Among these, the p-type semiconductor/n-type CdS heterojunction is the most successful photocathode structure because of its enhanced onset potential and photocurrent. However, it is determined that the main contributor to the enhanced activity is the Cd-doped layer and not the CdS layer. In this study, a Cd-doped n⁺p-buried homojunction of a CuInS₂ photocathode is first demonstrated without a CdS layer. The homojunction exhibited a more active and stable PEC performance than the CdS/CuInS₂ heterojunction. Moreover, it is confirmed that Cd doping is effective for other p-type materials. These results strongly suggest that the effects of Cd doping on photocathodes should be carefully investigated when designing CdS/p-semiconductor heterojunction photoelectrodes. They also indicate that the Cd-doped layer has great potential to replace the CdS layer in future photoelectrode designs.

中文翻译：

n-CdS/p 型半导体界面光电化学活性增强的起源：同质结还是异质结？

光电极的表面工程被认为是实现高效光电化学（PEC）电池的关键，并且已经研究了各种 p 型材料用作光电极。其中，p 型半导体/n 型 CdS 异质结是最成功的光电阴极面结构，因为它具有增强的起始电位和光电流。但是，可以确定的是，增强活性的主要贡献者是 Cd 掺杂层，而不是 CdS 层。在这项研究中，首先证明了 CuInS₂ 光阴极面的 Cd 掺杂 n⁺p 埋入同质结，而没有 CdS 层。同质结表现出比 CdS/CuInS₂ 异质结更活跃和稳定的 PEC 性能。此外，证实了 Cd 掺杂对其他 p 型材料有效。这些结果强烈表明，在设计 CdS/p 半导体异质结光电极时，应仔细研究 Cd 掺杂对光电阴极面的影响。它们还表明，掺镉层在未来的光电电极设计中具有取代 CdS 层的巨大潜力。

更新日期：2024-09-09

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