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Theoretical study of piezoelectric and light absorption properties, and carrier mobilities of Janus TiPX (X = F, Cl, and Br) monolayers
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2024-09-09 , DOI: 10.1039/d4cp02590c
Tong-Tong Yan 1 , Guo-Xiang Zhou 1 , Xiao-Long Jiang 1 , Xu-Chen Qin 1 , Jia Li 2
Affiliation  

Janus TiPX (X = F, Cl, and Br) monolayers were systematically investigated through first-principles calculations. The Janus TiPX monolayers exhibit mechanical and dynamic stability. Two monolayers are indirect bandgap semiconductors, except the TiPBr monolayer, which has the features of a quasi-direct bandgap semiconductor. Biaxial strain can modify the band gap of single layers. The Janus TiPX monolayers have remarkable flexibility and piezoelectric properties. In particular, the TiPF monolayer shows high horizontal (44.18 pm V−1) and vertical piezoelectric coefficients (−3.59 pm V−1). These values exceed those of conventional bulk materials, like GaN (3.1 pm V−1) and α-quartz (2.3 pm V−1). All of the monolayers have absorption coefficients of 105 cm−1 for visible and ultraviolet (UV) light, which are one order of magnitude greater than that of MoSSe. Furthermore, TiPX monolayers have high carrier mobility. Janus TiPX monolayers represent a class of two-dimensional (2D) materials with exceptional properties and multifunctionality, holding significant promise for various applications in piezoelectric sensors, solar cells, and nano-electronic devices.

中文翻译:


Janus TiPX(X = F、Cl 和 Br)单层的压电和光吸收特性以及载流子迁移率的理论研究



通过第一性原理计算系统地研究了 Janus TiPX(X = F、Cl 和 Br)单分子层。 Janus TiPX 单分子层表现出机械和动态稳定性。两个单层都是间接带隙半导体,除了TiPBr单层之外,它具有准直接带隙半导体的特征。双轴应变可以改变单层的带隙。 Janus TiPX 单层膜具有卓越的柔韧性和压电特性。特别地,TiPF单层表现出高水平压电系数(44.18 pm V -1 )和垂直压电系数(-3.59 pm V -1 )。这些值超过了传统块体材料的值,例如 GaN (3.1 pm V -1 ) 和 α-石英 (2.3 pm V -1 )。所有单层对可见光和紫外(UV)光的吸收系数均为10 5 cm -1 ,比MoSSe大一个数量级。此外,TiPX单层具有高载流子迁移率。 Janus TiPX 单层代表了一类具有卓越性能和多功能的二维 (2D) 材料,在压电传感器、太阳能电池和纳米电子设备的各种应用中具有重大前景。
更新日期:2024-09-09
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