Ferroelectric field effect transistors (Fe-FETs) offer promising candidates for neuromorphic computing. However, it is still challenging to achieve a light-tunable field effect, which limits the function of photo-synapse. In this work, a ferroelectric semiconductor floating-gate transistor (FSF-FET) is proposed based on MoS2/h-BN/α-In2Se3 van der Waals heterojunctions (vdWHs), in which the two-dimensional ferroelectric semiconducting α-In2Se3 and dielectric h-BN serve as the trapped layer of charges and prevent layer, respectively. The excellent memory performances are exhibited, including a high programming/erasing ratio of over 107, a large memory window ratio of 74.69%, and good non-volatility. Moreover, the FSF-FETs also possess the light-tunable synapse behaviors, including the high paired-pulse facilitation of 236% and an obvious transition from short-term plasticity to long-term plasticity. The high recognition rate of 93.9% is achieved with dual-mode modulation of light and electrical pulses. The ferroelectric semiconductor floating-gate design opens up a strategy to realize the light-tunable field effect of Fe-FETs for photo-synapse.

中文翻译：

---

一种用于记忆和光突触的具有光可调场效应的二维铁电半导体浮栅晶体管


铁电场效应晶体管 （Fe-FET） 为神经形态计算提供了有前途的候选者。然而，实现光可调场效应仍然具有挑战性，这限制了光突触的功能。本工作提出了一种基于 MoS2/h-BN/α-In2Se3 范德华异质结 （vdWHs） 的铁电半导体浮栅晶体管 （FSF-FET），其中二维铁电半导体 α-In2Se3 和电介质 h-BN 分别用作电荷的捕获层和防止层。表现出优异的存储性能，包括超过 107 的高编程/擦除比、74.69% 的大存储窗口比和良好的非易失性。此外，FSF-FET 还具有光可调突触行为，包括 236% 的高配对脉冲促进和从短期可塑性到长期可塑性的明显转变。93.9% 的高识别率是通过光和电脉冲的双模调制实现的。铁电半导体浮栅设计开辟了一种策略，以实现 Fe-FET 对光突触的可调光场效应。