当前位置：
X-MOL 学术
›
IEEE J. Emerg. Sel. Top. Power Electron.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Accurate Modeling for GaN HEMTs and MMICs for C ryogenic Electronics Applications Utilizing Artificial Neural Network
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-09-06 , DOI: 10.1109/jestpe.2024.3455999 Zikun Xiang 1 , Haochen Zhang 2 , Bolun Zeng 1 , Mingshuo Zhang 3 , Lei Yang 2 , Liling Qiu 1 , Xi Jin , Yi Pei 4 , Guoping Guo 5 , Chao Luo 1 , Haiding Sun 2
中文翻译：
利用人工神经网络对低温电子应用中的 GaN HEMT 和 MMIC 进行精确建模
更新日期：2024-09-06
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 4.6 ) Pub Date : 2024-09-06 , DOI: 10.1109/jestpe.2024.3455999 Zikun Xiang 1 , Haochen Zhang 2 , Bolun Zeng 1 , Mingshuo Zhang 3 , Lei Yang 2 , Liling Qiu 1 , Xi Jin , Yi Pei 4 , Guoping Guo 5 , Chao Luo 1 , Haiding Sun 2
Affiliation
中文翻译：
利用人工神经网络对低温电子应用中的 GaN HEMT 和 MMIC 进行精确建模
京公网安备 11010802027423号