The poor operational stability of perovskite light-emitting diodes (PeLEDs) remains a major obstacle to their commercial application. Achieving high brightness and quantum efficiency at low driving voltages, thus effectively reducing heat accumulation, is key to enhancing the operational lifetime of PeLEDs. Here, we present a breakthrough, attaining a record-low driving voltage while maintaining high brightness and efficiency. By thoroughly suppressing interface recombination and ensuring excellent charge transport, our PeLEDs, with an emission peak at 515 nanometers, achieve a maximum brightness of 90,295 candelas per square meter and a peak external quantum efficiency of 27.8% with an ultralow turn-on voltage of 1.7 volts (~70% bandgap voltage). Notably, Joule heat is nearly negligible at these low driving voltages, substantially extending the operational lifetime to 7691.1 hours. Our optimized strategies effectively tackle stability issue through thermal management, paving the way for highly stable PeLEDs.

中文翻译：

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超低电压驱动高效稳定钙钛矿发光二极管


钙钛矿发光二极管（PeLED）的工作稳定性差仍然是其商业应用的主要障碍。在低驱动电压下实现高亮度和量子效率，从而有效减少热量积累，是延长 PeLED 使用寿命的关键。在这里，我们提出了一项突破，在保持高亮度和效率的同时实现了创纪录的低驱动电压。通过彻底抑制界面复合并确保优异的电荷传输，我们的PeLED发射峰值为515纳米，最高亮度可达每平方米90,295坎德拉，峰值外量子效率为27.8%，超低开启电压为1.7伏（~70% 带隙电压）。值得注意的是，在这些低驱动电压下，焦耳热几乎可以忽略不计，从而将工作寿命大幅延长至 7691.1 小时。我们的优化策略通过热管理有效解决了稳定性问题，为高度稳定的 PeLED 铺平了道路。