The operational stability becomes a key issue affecting the commercialization for organic field-effect transistors (OFETs). It is widely recognized to be closely related to the defects and traps at the interface between dielectric and organic semiconductors, but this understanding does not always effectively address operational instability, implying that the factors influencing the operational stability have not been fully understood. Here, we reveal that the self-heating effect is another crucial factor in operational stability. By using hexagonal boron nitride (hBN) to assist interfacial thermal dissipation, the dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) FETs exhibit high mobility of 14.18 cm 2 V −1 s −1 and saturated power density up to 1.8 × 10 4 W cm −2 . The OFET can operate at a power density of 1.06 × 10 4 W cm −2 for 30,000 s with negligible performance degradation, showing excellent operational stability under high power density. This work deepens the understanding on operational stability and develops an effective way for ultrahigh stable devices.

中文翻译：

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界面热耗散在有机场效应晶体管工作稳定性中的关键作用


操作稳定性成为影响有机场效应晶体管 （OFET） 商业化的关键问题。人们普遍认为它与电介质和有机半导体之间界面处的缺陷和陷阱密切相关，但这种理解并不总是能有效地解决操作不稳定性问题，这意味着影响操作稳定性的因素尚未得到充分理解。在这里，我们揭示了自热效应是运行稳定性的另一个关键因素。通过使用六方氮化硼 （hBN） 协助界面散热，二萘[2,3-b：2′，3′-f]噻代[3,2-b]噻吩 （DNTT） FET 表现出 14.18 cm 2 V −1 s −1 的高迁移率和高达 1.8 × 10 4 W cm −2 的饱和功率密度。OFET 可以在 1.06 × 10 4 W cm −2 的功率密度下运行 30,000 秒，性能下降可以忽略不计，在高功率密度下表现出出色的运行稳定性。这项工作加深了对运行稳定性的理解，并为超高稳定性器件开发了一种有效的途径。