It is feasible and effective to regulate the impedance matching of materials by constructing heterogeneous interfaces. Besides, materials with adjustable morphology such as hollow structure can improve the capacity to absorb microwave. Therefore, in this work, MoS2/CuS heterojunctions with hollow structure have been prepared by a simple one-step hydrothermal approach. By varying the quantity of cetyltrimethyl ammonium bromide (CTAB), the composite’s shape and structure may be modified. The results manifest that the existence of defects, lamellar and heterogeneous structures is conducive to improve the polarization and impedance matching of materials. In addition, the introduction of hollow structure can not only reduce the weight of the material, but also significantly improve the microwave absorbing abilities of the MoS2/CuS composite. Also, such metal-sulfide semiconductor junctions lead to the formation of a built-in electric field, which can hugely enhance the absorbing properties synergizing with other dielectric polarization mechanisms. For MoS2/CuS-1 sample, the minimum reflection loss (RLmin) can reach up to −64.01 dB when the thickness is 2.39 mm, and the broadest effective absorbing bandwidth (EAB) is 5.64 GHz at 2.22 mm. This work puts up a simple and useful method to synthesize hollow structural materials with heterojunctions and plumbs the influence of modified morphology on the microwave absorbing performance of materials.

中文翻译：

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通过在 MoS2/CuS 空心微球中构建半导体异质界面来增强界面极化以吸收微波


通过构建异质界面来调节材料的阻抗匹配是可行且有效的。此外，具有可调节形貌（如中空结构）的材料可以提高吸收微波的能力。因此，在这项工作中，通过简单的一步水热方法制备了具有中空结构的MoS2/CuS异质结。通过改变十六烷基三甲基溴化铵（CTAB）的量，可以改变复合材料的形状和结构。结果表明，缺陷、层状和异质结构的存在有利于改善材料的极化和阻抗匹配。此外，中空结构的引入不仅可以减轻材料的重量，还可以显着提高MoS2/CuS复合材料的微波吸收能力。此外，这种金属-硫化物半导体结会导致内置电场的形成，与其他介电极化机制协同作用，可以极大地增强吸收性能。对于MoS2/CuS-1样品，当厚度为2.39 mm时，最小反射损耗（RLmin）可达-64.01 dB，最宽的有效吸收带宽（EAB）在2.22 mm处为5.64 GHz。这项工作提出了一种简单有效的方法来合成异质结空心结构材料，并探讨了改性形貌对材料吸波性能的影响。