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Giant spin seebeck effect with highly polarized spin current generation and piezoelectricity in flexible V2SeTeO altermagnet at room temperature
Materials Today Physics ( IF 10.0 ) Pub Date : 2024-08-28 , DOI: 10.1016/j.mtphys.2024.101539
Abd ullah , Djamel Bezzerga , Jisang Hong

Studies on altermagnetic materials are attracting extensive research efforts owing to their directional dependent spin split band structure. However, it is rare to find reports on the possibility of multifunctionality in altermagnetic systems. Here, we explore the spin dependent transport properties and piezoelectricity of two-dimensional V2SeTeO altermagnet. The V2SeTeO system has a direct band gap of 0.32 eV with a Neel temperature of 510 K. We find a giant effective Seebeck coefficient of 0.64 mV/K at 300 K. This is several times larger than that found in bulk and other two-dimensional materials. Moreover, the effective Seebeck effect is entirely determined by either only spin-up or spin-down component. This feature implies that we can generate highly spin polarized current by temperature gradient at room temperature. We attribute this pure spin current generation to the directional dependent spin split band structure. Along with the spin dependent transport properties, we also find that the Janus V2SeTeO altermagnet shows outstanding flexibility and piezoelectric response with out-of-plane piezoelectric coefficient of d31=0.245pm/V. Overall, we propose that the V2SeTeO altermagnet system exhibits multifunctional physical properties at room temperature, and this can be utilized for potential spintronics and flexible piezoelectric applications simultaneously.

中文翻译:


室温下柔性 V2SeTeO 交变磁体中具有高度极化自旋电流产生和压电性的巨自旋塞贝克效应



由于其方向相关的自旋分裂能带结构,对交变磁材料的研究吸引了广泛的研究工作。然而,很少有关于交流磁系统多功能性可能性的报道。在这里,我们探索了二维 V2SeTeO 交流磁体的自旋相关输运特性和压电性。 V2SeTeO 系统的直接带隙为 0.32 eV,尼尔温度为 510 K。我们发现在 300 K 时,有效塞贝克系数为 0.64 mV/K。这比块体和其他二维材料中发现的有效塞贝克系数大几倍。材料。此外,有效的塞贝克效应完全由自旋向上或自旋向下分量决定。这一特征意味着我们可以在室温下通过温度梯度产生高度自旋极化电流。我们将这种纯自旋电流的产生归因于方向相关的自旋分裂能带结构。除了自旋相关的输运特性外,我们还发现 Janus V2SeTeO 交流磁体表现出出色的灵活性和压电响应,面外压电系数为 d31=0.245pm/V。总的来说,我们认为 V2SeTeO 交替磁体系统在室温下表现出多功能物理特性,这可以同时用于潜在的自旋电子学和柔性压电应用。
更新日期:2024-08-28
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