This study explores the enhancement of amorphous gallium oxide (a-Ga2O3) thin-film phototransistors through the construction of a hetero-interface with magnesium-doped zinc oxide (Mg:ZnO). The optimized a-Ga2O3/Mg:ZnO interface significantly improves the separation, transport, and collection of photogenerated carriers, leveraging the excellent electron transport properties of Mg:ZnO. The resulting phototransistors exhibit high photoresponsivity, up to 1.27 A/W, and demonstrate X-ray detection capabilities with a remarkably thin photosensitive layer (∼60 nm). These advancements indicate potential applications in highly sensitive and selective UV photodetection technologies for remote sensing, environmental monitoring, and UV communication systems. This research highlights the effectiveness of hetero-interface engineering in overcoming the intrinsic limitations of a-Ga2O3, enhancing the performance and applicability of Ga2O3-based optoelectronic devices.

中文翻译：

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异质界面增强的高性能 a-Ga2O3 薄膜光电晶体管


本研究探讨了通过与镁掺杂氧化锌 （Mg：ZnO） 构建异质界面来增强非晶态氧化镓 （a-Ga2O3） 薄膜光电晶体管。优化的 a-Ga2O3/Mg：ZnO 界面利用 Mg：ZnO 优异的电子传输特性，显著改善了光生载流子的分离、传输和收集。所得光电晶体管表现出高达 1.27 A/W 的高光响应度，并展示了具有非常薄的受光层 （∼60 nm） 的 X 射线检测能力。这些进步表明了在遥感、环境监测和紫外线通信系统方面的高灵敏度和选择性紫外光探测技术的潜在应用。这项研究强调了异质界面工程在克服 a-Ga2O3 的固有限制、提高基于 Ga2O3 的光电器件的性能和适用性方面的有效性。