Chemical mechanical polishing (CMP) is currently the most widely used method for material removal and surface planarization of glass. An environmentally friendly method of improving polishing performance by using a mixed abrasive slurry of ceria and diamond was proposed in this study. The results of polishing experiments showed that compared with single ceria abrasive, the materials removal rate (MRR) of the mixed abrasive slurry increased from 82.7 nm/min to 109.6 nm/min, while the surface roughness (Ra) decreased from 26.4 nm to 0.6 nm after polishing. An amorphous reaction layer formed during the CMP process was observed directly using transmission electron microscopy. Thermodynamic analysis was conducted to investigate the interfacial chemical reactions during the polishing process. A model was proposed to describe the mechanism of the materials removal.

中文翻译：

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混合磨料研磨液化学机械抛光特性评价：抛光行为及材料去除机理研究


化学机械抛光 （CMP） 是目前使用最广泛的玻璃材料去除和表面平坦化的方法。本研究提出了一种通过使用铈和金刚石混合研磨浆来提高抛光性能的环保方法。抛光实验结果表明，与单一铈磨料相比，抛光后混合磨料浆料的材料去除率 （MRR） 从 82.7 nm/min 增加到 109.6 nm/min，而表面粗糙度 （Ra） 从 26.4 nm 降低到 0.6 nm。使用透射电子显微镜直接观察在 CMP 过程中形成的无定形反应层。进行了热力学分析以研究抛光过程中的界面化学反应。提出了一个模型来描述材料去除的机制。