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Exciton–Phonon Coupling in Single ZnCdSe-Dot/CdS-Rod Nanocrystals with Engineered Band Gaps from Type-II to Type-I
ACS Photonics ( IF 6.5 ) Pub Date : 2024-09-06 , DOI: 10.1021/acsphotonics.4c00931 Florian Johst 1 , Jannik Rebmann 1 , Hans Werners 1 , Lars Klemeyer 2 , Jagadesh Kopula Kesavan 2 , Dorota Koziej 2 , Christian Strelow 1 , Gabriel Bester 1, 3 , Alf Mews 1 , Tobias Kipp 1
ACS Photonics ( IF 6.5 ) Pub Date : 2024-09-06 , DOI: 10.1021/acsphotonics.4c00931 Florian Johst 1 , Jannik Rebmann 1 , Hans Werners 1 , Lars Klemeyer 2 , Jagadesh Kopula Kesavan 2 , Dorota Koziej 2 , Christian Strelow 1 , Gabriel Bester 1, 3 , Alf Mews 1 , Tobias Kipp 1
Affiliation
Exciton–phonon coupling limits the homogeneous emission line width of nanocrystals. Hence, a full understanding of this is crucial. In this work, we statistically investigate exciton–phonon coupling by performing single-particle spectroscopy on colloidal Zn1–xCdxSe/CdS and CdSe/CdS dot-in-rod nanocrystals at cryogenic temperatures (T ≈ 10 K). In situ cation exchange enables us to analyze different band alignments and, thereby, different charge-carrier distributions. We find that the relative intensities of the longitudinal optical S- and Se-type phonon replicas correlate with the charge-carrier distribution. Our experimental findings are complemented with quantum mechanical calculations within the effective mass approximation that hint at the relevance of surface charges.
中文翻译:
具有从 II 型到 I 型设计带隙的单 ZnCdSe-Dot/CdS-Rod 纳米晶体中的激子-声子耦合
激子-声子耦合限制了纳米晶体的均匀发射线宽度。因此,充分理解这一点至关重要。在这项工作中,我们通过在低温( T ≈ 10 K)下对胶体 Zn 1– x Cd x Se/CdS 和 CdSe/CdS 点棒纳米晶体进行单粒子光谱研究,统计研究激子-声子耦合。原位阳离子交换使我们能够分析不同的能带排列,从而分析不同的载流子分布。我们发现纵向光学 S 型和 Se 型声子复制品的相对强度与载流子分布相关。我们的实验结果与有效质量近似内的量子力学计算相补充,暗示了表面电荷的相关性。
更新日期:2024-09-06
中文翻译:
具有从 II 型到 I 型设计带隙的单 ZnCdSe-Dot/CdS-Rod 纳米晶体中的激子-声子耦合
激子-声子耦合限制了纳米晶体的均匀发射线宽度。因此,充分理解这一点至关重要。在这项工作中,我们通过在低温( T ≈ 10 K)下对胶体 Zn 1– x Cd x Se/CdS 和 CdSe/CdS 点棒纳米晶体进行单粒子光谱研究,统计研究激子-声子耦合。原位阳离子交换使我们能够分析不同的能带排列,从而分析不同的载流子分布。我们发现纵向光学 S 型和 Se 型声子复制品的相对强度与载流子分布相关。我们的实验结果与有效质量近似内的量子力学计算相补充,暗示了表面电荷的相关性。