We studied the interfacial spin Hall magnetotransport in the Tb3Fe5O12 (TbIG)/Pt system across a non-magnetic [Y3Al5O12 (YAG) and Gd3Ga5O12 (GGG)] spacer with garnet structure. TbIG (30 nm)/spacer samples were grown on single-crystal (GGG) (111) substrates by pulsed laser deposition before 5 nm of Pt was sputtered on the samples and patterned into Hall bars. The YAG spacer thickness (tYAG) dependences of anomalous Hall effect resistance (RAHE) indicated no significant change on the magnetization compensation temperature of TbIG. Hysteretic RAHE loops were observed at low magnetic fields, but with reducing magnitude as tYAG thickness increases. A crossover of the RAHE sign was observed at temperatures below the compensation temperature, which decreased sharply from 135 to 34 K as tYAG increased from 0 to 1 nm. We attributed this to the strong dependence of the magnetic proximity effect toward the YAG insertion in the TbIG/Pt interface. Replacement of the YAG spacer with GGG showed significant impact on the RAHE behavior. No obvious RAHE-H loops were observed in the TbIG/Pt sample inserted with 0.5 nm GGG spacer, which could be linked to the strong magnetic contribution of the Gd ions. This work highlights the tunability of interfacial transport behavior in iron garnet/heavy metal systems through ultrathin spacers, providing guidance for the interfacial design of spintronic devices.

中文翻译：

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超薄石榴石垫片对 Tb3Fe5O12/Pt 双层磁输运的影响


我们研究了 Tb3Fe5O12 （TbIG）/Pt 系统中跨石榴石结构的非磁性 [Y3Al5O12 （YAG） 和 Gd3Ga5O12 （GGG）] 间隔器的界面自旋霍尔磁传输。TbIG （30 nm）/间隔样品通过脉冲激光沉积在单晶 （GGG） （111） 衬底上生长，然后将 5 nm 的 Pt 溅射到样品上并图案化成霍尔棒。异常霍尔效应电阻 （RAHE） 的 YAG 间隔层厚度 （tYAG） 依赖性表明 TbIG 的磁化补偿温度没有显着变化。在低磁场下观察到滞后 RAHE 回线，但随着 tYAG 厚度的增加，其幅度减小。在低于补偿温度的温度下观察到 RAHE 符号的交叉，随着 tYAG 从 0 增加到 1 nm，该交叉从 135 K 急剧下降到 34 K。我们将其归因于磁邻近效应对 TbIG/Pt 界面中 YAG 插入的强烈依赖性。用 GGG 替换 YAG 垫片对 RAHE 行为有显着影响。在插入 0.5 nm GGG 垫片的 TbIG/Pt 样品中没有观察到明显的 RAHE-H 环，这可能与 Gd 离子的强磁贡献有关。这项工作突出了铁石榴石/重金属系统中界面传输行为通过超薄垫片的可调性，为自旋电子器件的界面设计提供了指导。