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Alleviating the volume expansion of silicon anodes by constructing a high-strength ordered multidimensional encapsulation structure
Chemical Science ( IF 7.6 ) Pub Date : 2024-09-05 , DOI: 10.1039/d4sc04751f Yun Yu 1 , Haiqiang Gong 1 , Xinyou He 1 , Lei Ming 1 , Xiaowei Wang 1 , Xing Ou 1
Chemical Science ( IF 7.6 ) Pub Date : 2024-09-05 , DOI: 10.1039/d4sc04751f Yun Yu 1 , Haiqiang Gong 1 , Xinyou He 1 , Lei Ming 1 , Xiaowei Wang 1 , Xing Ou 1
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The application of silicon-based nanomaterials in fast-charging scenarios is hindered by volume expansion during lithiation and side reactions induced by surface effects. Constructing a robust encapsulation structure with high mechanical strength and conductivity is pivotal for optimizing the electrochemical performance of nanostructured silicon anodes. Herein, we propose a multifaceted hierarchical encapsulation structure featuring excellent mechanical strength and high conductivity by sequentially incorporating SiOx, hard carbon, and closed-pore carbon layers around silicon quantum dots, thereby enabling stable cycling at high current densities. In this structure, the ultra-thin SiOx layer strengthens the Si–C interface, while the outermost carbon matrix with closed pores functions both as a conductive network and a barrier against electrolyte intrusion. Notably, the synthesized material exhibits a specific capacity of 1506 mA h g−1 with 90.17% retention after 300 cycles at 1.0 A g−1. After 500 cycles at 5.0 A g−1, it retains 640.4 mA h g−1, over 70% of its initial capacity.
中文翻译：
通过构建高强度有序多维封装结构缓解硅阳极体积膨胀
硅基纳米材料在快速充电场景中的应用受到锂化过程中体积膨胀以及表面效应引起的副反应的阻碍。构建具有高机械强度和导电性的坚固封装结构对于优化纳米结构硅阳极的电化学性能至关重要。在此，我们提出了一种多面分层封装结构，通过在硅量子点周围依次结合SiO x 、硬碳和闭孔碳层，具有优异的机械强度和高导电性，从而实现高电流密度下的稳定循环。在这种结构中，超薄的SiO x层增强了Si-C界面，而最外层具有闭孔的碳基体既充当导电网络又充当防止电解质侵入的屏障。值得注意的是，合成材料在1.0 A g -1下循环300次后表现出1506 mA hg -1的比容量和90.17%的保留率。在 5.0 A g -1下循环 500 次后，它保留了 640.4 mA hg -1 ，超过其初始容量的 70%。
更新日期：2024-09-05
中文翻译：
通过构建高强度有序多维封装结构缓解硅阳极体积膨胀
硅基纳米材料在快速充电场景中的应用受到锂化过程中体积膨胀以及表面效应引起的副反应的阻碍。构建具有高机械强度和导电性的坚固封装结构对于优化纳米结构硅阳极的电化学性能至关重要。在此，我们提出了一种多面分层封装结构，通过在硅量子点周围依次结合SiO x 、硬碳和闭孔碳层，具有优异的机械强度和高导电性，从而实现高电流密度下的稳定循环。在这种结构中，超薄的SiO x层增强了Si-C界面，而最外层具有闭孔的碳基体既充当导电网络又充当防止电解质侵入的屏障。值得注意的是，合成材料在1.0 A g -1下循环300次后表现出1506 mA hg -1的比容量和90.17%的保留率。在 5.0 A g -1下循环 500 次后，它保留了 640.4 mA hg -1 ，超过其初始容量的 70%。
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