Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films,Physical Review Letters

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Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films
Physical Review Letters ( IF 8.1 ) Pub Date : 2024-09-05 , DOI: 10.1103/physrevlett.133.106801
Ralph Bulanadi ₁ , Kumara Cordero-Edwards ₁ , Philippe Tückmantel ₁ , Sahar Saremi ₂ , Giacomo Morpurgo ₁ , Qi Zhang ₃ , Lane W. Martin _{2,

4,

5,

5} , Valanoor Nagarajan ₃ , Patrycja Paruch ₁

Affiliation

Defects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the “dressing” of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films—point defects externally induced via He2+ bombardment, and extended quasi-one-dimensional a domains formed in response to internal strains. The a domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the He2+ bombarded samples orient and align to impose further directional pinning, screening the effect of a domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices.

Published by the American Physical Society

2024

中文翻译：

点缺陷和扩展缺陷之间的相互作用及其对铁电薄膜中不稳定畴壁运动的影响

缺陷对铁电材料的极化和机电性能有重大影响。从统计学上讲，它们可以被看作是作用在弹性流形上的随机钉扎中心，减慢了畴壁的传播，并提高了开关极化所需的能量。在这里，我们展示了缺陷的 “修整” 可以导致对域壁动力学的前所未有的控制。我们在铁电氧化物薄膜中设计了两种不同维度的缺陷——通过 He2+ 轰击从外部诱导的点缺陷，以及响应内部应变而形成的扩展准一维 a 畴。a 域充当扩展的强固定站点（如预期的那样），施加高度本地化的方向约束。令人惊讶的是，He2+ 轰击样品中诱导的点缺陷定向和对齐以施加进一步的定向固定，从而筛选出域的影响。这种缺陷相互作用产生了更均匀和可预测的畴壁动力学。缺陷之间的这种工程相互作用对于铁电器件的进步至关重要。美国物理学会 2024 年出版

更新日期：2024-09-05

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