Screening of Polar Electron-Phonon Interactions near the Surface of the Rashba Semiconductor BiTeCl,Physical Review Letters

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Screening of Polar Electron-Phonon Interactions near the Surface of the Rashba Semiconductor BiTeCl
Physical Review Letters ( IF 8.1 ) Pub Date : 2024-09-03 , DOI: 10.1103/physrevlett.133.106401
J. Qu _{1,

2} , E. F. Cuddy _{1,

2} , X. Han _{1,

2} , J. Liu ₃ , H. Li ₃ , Y.-J. Zeng ₄ , B. Moritz ₁ , T. P. Devereaux _{1,

2,

2} , P. S. Kirchmann ₁ , Z.-X. Shen _{1,

2} , J. A. Sobota ₁

Affiliation

Understanding electron-phonon coupling in noncentrosymmetric materials is critical for controlling the internal fields which give rise to Rashba interactions. We apply time- and angle-resolved photoemission spectroscopy (trARPES) to study coherent phonons in the surface and bulk regions of the polar semiconductor BiTeCl. Aided by ab initio calculations, our measurements reveal the coupling of out-of-plane

A_{1}

modes and an in-plane

E_{2}

mode. By considering how these modes modulate the electric dipole moment in each unit cell, we show that the polar

A_{1}

modes are more effectively screened in the metallic surface region, while the nonpolar

E_{2}

mode couples in both regions. In addition to informing strategies to optically manipulate Rashba interactions, this Letter has broader implications for the behavior of electron-phonon coupling in systems characterized by inhomogeneous dielectric environments.

中文翻译：

Rashba 半导体 BiTeCl 表面附近极性电子-声子相互作用的筛选

了解非中心对称材料中的电子-声子耦合对于控制引起 Rashba 相互作用的内部场至关重要。我们应用时间和角度分辨光电子能谱 (trARPES) 来研究极性半导体 BiTeCl 表面和块体区域的相干声子。在从头计算的帮助下，我们的测量揭示了面外耦合