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Yttrium Cation Doping and Phenylphosphonic Acid Passivation for Pure-Red Perovskite Light-Emitting Diodes
ACS Energy Letters ( IF 19.3 ) Pub Date : 2024-09-03 , DOI: 10.1021/acsenergylett.4c01805
Rongwen Wang 1 , Jianqiao Zhao 1 , Jinming Ma 1 , Chengxu Lu 1 , Zhaoshi Yu 1 , Guoli Tu 1 , Jibin Zhang 2
Affiliation  

Surface defects and instability in CsPbBrxI3–x nanocrystals (NCs) present significant obstacles to their potential application in high-performance pure-red perovskite light-emitting diodes (PeLEDs). Here, we report a synergistic approach involving Yttrium cation (Y3+) doping and phenylphosphonic acid (PPA) passivation to address the aforementioned issues. The introduction of Y3+ ion doping not only reduces the formation energy of NCs but also increases the iodide vacancy defect formation energy. PPAs can coordinate with uncoordinated Pb2+ ions through their phosphine oxide groups, effectively passivating the surface defects. Additionally, the hydroxyl groups of PPAs can form hydrogen bonds with adjacent halide ions, thereby suppressing their migration and further strengthening the passivation effect. Consequently, the Y/PPA comodified NCs exhibit significantly enhanced stability and near-unity photoluminescence quantum yields. PeLEDs based on these NCs possess outstanding spectral stability with a peak external quantum efficiency of 24.5%, representing one of the top-performing pure-red PeLEDs based on the CsPbBrxI3–x NCs reported so far.

中文翻译:


纯红钙钛矿发光二极管的钇阳离子掺杂和苯基膦酸钝化



CsPbBr x I 3– x纳米晶体 (NC) 的表面缺陷和不稳定性对其在高性能纯红色钙钛矿发光二极管 (PeLED) 中的潜在应用造成了重大障碍。在这里,我们报告了一种涉及钇阳离子(Y 3+ )掺杂和苯基膦酸(PPA)钝化的协同方法来解决上述问题。 Y 3+离子掺杂的引入不仅降低了NCs的形成能,而且提高了碘化物空位缺陷的形成能。 PPA可以通过氧化膦基团与未配位的Pb 2+离子配位,有效钝化表面缺陷。此外,PPAs的羟基可以与相邻的卤离子形成氢键,从而抑制其迁移并进一步增强钝化效果。因此,Y/PPA 共修饰的 NC 表现出显着增强的稳定性和接近一致的光致发光量子产率。基于这些 NC 的 PeLED 具有出色的光谱稳定性,峰值外部量子效率为 24.5%,是迄今为止报道的基于 CsPbBr x I 3– x NC 的性能最佳的纯红色 PeLED 之一。
更新日期:2024-09-03
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