Due to the presence of an intrinsic C 1s peak in diamond, it is impossible to calibrate its binding energies using the adventitious C 1s peak (284.8 eV) during x-ray photoelectron spectroscopy measurement. The absence of accurate binding energy measurement makes it challenging to determine the interfacial band bending for the oxide/diamond heterojunction. To overcome this issue, a net-patterned gold (Au) mask is applied to the boron-doped diamond (B-diamond) to suppress the charge-up effect and calibrate the binding energy using the standard Au 4f peak (83.96 eV). The B-diamond epitaxial layer shows downward band bending toward the surface with a valence band maximum of 0.85 eV. Upon the formation of Al2O3 using an ozone precursor through the atomic layer deposition technique, the B-diamond continues to exhibit downward band bending toward the Al2O3/B-diamond interface. However, the bending energy has reduced, potentially attributed to the modification of the oxygen vacancies on the B-diamond surface by the ozone precursor during the Al2O3 deposition.

中文翻译：

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校准结合能并阐明 Al2O3/金刚石异质结的界面带弯曲


由于金刚石中存在固有的 C 1s 峰，因此在 X 射线光电子能谱测量过程中，无法使用不定的 C 1s 峰 （284.8 eV） 来校准其结合能。由于缺乏精确的结合能测量，因此很难确定氧化物/金刚石异质结的界面带弯曲。为了克服这个问题，在掺硼金刚石 （B 金刚石） 上应用净图案金 （Au） 掩模，以抑制充电效应并使用标准 Au 4f 峰 （83.96 eV） 校准结合能。B 金刚石外延层显示向表面向下弯曲，价带最大值为 0.85 eV。在通过原子层沉积技术使用臭氧前驱体形成 Al2O3 后，B 金刚石继续向 Al2O3/B 金刚石界面向下弯曲。然而，弯曲能量已经降低，这可能是由于 Al2O3 沉积过程中臭氧前驱体改变了 B 金刚石表面的氧空位。