The highly anisotropic crystal structure of β-Ga2O3 gives rise to a variety of crystal planes, among which the (310) plane is a potentially stable close-packed plane for the O sublattice. In this paper, we report the β-Ga2O3 single crystal and substrates with a (310) major plane grown by the spontaneous nucleation technique in the casting method. High-quality crystal growth and substrate processing were confirmed by the 25.67 arc sec full width at half maximum and the 0.25 nm surface roughness. The nanoindentation experiments revealed the (310) substrate's better elastic recovery than that of (100) substrate. The Young's modulus and hardness of (310) substrates were 200 and 7.6 GPa, respectively. The surface barrier height and the Schottky barrier height were 1.25 and 0.92 eV, respectively. First principles calculations identified the (310)-Ga-I plane as the most stable surface configuration of the (310) plane under oxygen-poor condition, with a surface energy density of 1.48 J/m2. The (310) twin boundary formation around the O sublattice has a high energy density of 0.55 J/m2, suggesting its unlikelihood of spontaneous formation. These properties of (310) plane facilitate a high-quality crystal processing and epitaxial growth, thus endowing potential applications in high-quality power devices. Furthermore, the growth and fabrication of the (310) plane provide a route toward understanding the properties of β-Ga2O3 and advancing the growth techniques of oxide crystals.

中文翻译：

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通过铸造方法生长的 β-Ga2O3 的氧密堆积 （310） 平面衬底


β-Ga2O3 的高度各向异性晶体结构产生了多种晶面，其中 （310） 面是 O 亚晶格的潜在稳定密堆平面。在本文中，我们报道了在铸造方法中通过自发成核技术生长的 β-Ga2O3 单晶和具有 （310） 主平面的衬底。半峰时 25.67 角秒的全宽和 0.25 nm 的表面粗糙度证实了高质量的晶体生长和衬底加工。纳米压痕实验揭示了 （310） 衬底比 （100） 衬底更好的弹性恢复。（310） 基材的杨氏模量和硬度分别为 200 和 7.6 GPa。表面势垒高度和 Schottky 势垒高度分别为 1.25 和 0.92 eV。第一性原理计算确定 （310）-Ga-I 平面是 （310） 平面在缺氧条件下最稳定的表面构型，表面能量密度为 1.48 J/m2。围绕 O 亚晶格的 （310） 孪晶界形成具有 0.55 J/m2 的高能量密度，表明它不太可能自发形成。（310） 平面的这些特性促进了高质量的晶体加工和外延生长，从而在高质量功率器件中具有潜在的应用。此外，（310） 平面的生长和制造为了解 β-Ga2O3 的性质和推进氧化物晶体的生长技术提供了一条途径。