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Low humidity hysteresis and fast response silicon based capacitive humidity sensor based on SiO2 supported GO film
Sensors and Actuators B: Chemical ( IF 8.0 ) Pub Date : 2024-08-28 , DOI: 10.1016/j.snb.2024.136503 Xinglin Yu , Xiaoyu Li , Sihan Ma , Deng Long , Wentao Li , Kun Tang , Xiang Yu , Xing Ding
Sensors and Actuators B: Chemical ( IF 8.0 ) Pub Date : 2024-08-28 , DOI: 10.1016/j.snb.2024.136503 Xinglin Yu , Xiaoyu Li , Sihan Ma , Deng Long , Wentao Li , Kun Tang , Xiang Yu , Xing Ding
Low humidity hysteresis and fast response are important parameters for evaluating sensor performances. However, it is difficult for a sensor to simultaneously obtain a low humidity hysteresis and fast response time. In this work, a low humidity hysteresis and fast response silicon based capacitive humidity sensor was fabricated based on a two-step deposition strategy using SiO and GO. The scanning electron microscope (SEM) was used to characterize the morphologies for the fabricated sensor, demonstrating the successful synthesis of sensitive films. The experimental results suggested that, compared with the pure GO and GO/SiO composite film sensors, the two-step deposition strategy fabricated layered SiO supported GO film humidity sensor exhibited the lowest humidity hysteresis and the fastest response speed. The humidity hysteresis and response/recovery time are 3.5 % and 3 s/2 s, respectively. The humidity sensing mechanism for the observed low humidity hysteresis and fast response was analyzed via morphologic structures and Young-Laplace equation. This work demonstrates that the morphological structures modulation is an important and effective method for improving sensor performance, providing a valuable reference for high performance sensor fabrication.
中文翻译:
基于 SiO2 支撑的 GO 薄膜的低湿度迟滞和快速响应硅基电容式湿度传感器
低湿度滞后和快速响应是评估传感器性能的重要参数。然而,传感器很难同时获得低湿度滞后和快速响应时间。在这项工作中,基于使用 SiO 和 GO 的两步沉积策略制造了低湿度滞后和快速响应的硅基电容式湿度传感器。使用扫描电子显微镜(SEM)来表征所制造的传感器的形貌,证明敏感薄膜的成功合成。实验结果表明,与纯GO和GO/SiO复合薄膜传感器相比,两步沉积策略制备的层状SiO支撑GO薄膜湿度传感器表现出最低的湿度滞后和最快的响应速度。湿度滞后和响应/恢复时间分别为 3.5% 和 3 s/2 s。通过形态结构和Young-Laplace方程分析了观察到的低湿度滞后和快速响应的湿度传感机制。这项工作表明形态结构调制是提高传感器性能的重要而有效的方法,为高性能传感器的制造提供了有价值的参考。
更新日期:2024-08-28
中文翻译:
基于 SiO2 支撑的 GO 薄膜的低湿度迟滞和快速响应硅基电容式湿度传感器
低湿度滞后和快速响应是评估传感器性能的重要参数。然而,传感器很难同时获得低湿度滞后和快速响应时间。在这项工作中,基于使用 SiO 和 GO 的两步沉积策略制造了低湿度滞后和快速响应的硅基电容式湿度传感器。使用扫描电子显微镜(SEM)来表征所制造的传感器的形貌,证明敏感薄膜的成功合成。实验结果表明,与纯GO和GO/SiO复合薄膜传感器相比,两步沉积策略制备的层状SiO支撑GO薄膜湿度传感器表现出最低的湿度滞后和最快的响应速度。湿度滞后和响应/恢复时间分别为 3.5% 和 3 s/2 s。通过形态结构和Young-Laplace方程分析了观察到的低湿度滞后和快速响应的湿度传感机制。这项工作表明形态结构调制是提高传感器性能的重要而有效的方法,为高性能传感器的制造提供了有价值的参考。