Atomic-Layer-Deposition-Free Monolithic Perovskite/Silicon Tandem Solar Cell Reaching 29.91% Power Conversion on Industrial PERX/TOPCon-like Silicon Bottom Cells,ACS Energy Letters

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Atomic-Layer-Deposition-Free Monolithic Perovskite/Silicon Tandem Solar Cell Reaching 29.91% Power Conversion on Industrial PERX/TOPCon-like Silicon Bottom Cells
ACS Energy Letters ( IF 19.3 ) Pub Date : 2024-08-26 , DOI: 10.1021/acsenergylett.4c01502
Bor Li ₁ , Marlene Härtel ₁ , Amran Al-Ashouri ₁ , Maxim Simmonds _{1,

2} , Isabella Taupitz ₁ , Lukas Kegelmann ₃ , Enrico Jarzembowski ₃ , Felix Frühauf ₃ , Eike Köhnen ₁ , Lars Korte ₁ , Fabian Fertig ₃ , Jörg Müller ₃ , Steve Albrecht ₁

Affiliation

Typically, the perovskite top-cell processes of monolithically integrated perovskite/silicon tandem solar cells (PSTSCs) include a slow and expensive atomic layer deposition (ALD) to grow a tin oxide (SnO_x) buffer layer protecting against sputter damage during the subsequent transparent top electrode deposition. We successfully replaced the ALD-SnO_x buffer layer with industry-compatible thermal evaporation of bathocuproine (BCP). By applying soft-sputter deposition of indium zinc oxide (IZO), we circumvent the increased risk of sputter damage when replacing ALD-SnO_x with organic BCP. In addition to technological advantages, this leads to a 20 mV gain in open-circuit voltage, similar charge extraction rates, and higher current densities due to less parasitic absorption, as confirmed by absolute and transient photoluminescence, current density–voltage, spectral responsivity, and transient surface photovoltage measurements. Integrating the BCP/IZO top contact into tandem solar cells enables a certified power conversion efficiency of 29.91% of our ALD-free PSTSC using industrial silicon bottom cells from Q CELLS’ Q.ANTUM technology.

中文翻译：

无原子层沉积单片钙钛矿/硅串联太阳能电池在工业 PERX/TOPCon 类硅底电池上达到 29.91% 功率转换

通常，单片集成钙钛矿/硅串联太阳能电池 (PSTSC) 的钙钛矿顶部电池工艺包括缓慢且昂贵的原子层沉积 (ALD)，以生长氧化锡 (SnO _x ) 缓冲层，以防止后续透明过程中的溅射损坏。顶部电极沉积。我们成功地用工业兼容的浴铜灵 (BCP) 热蒸发取代了 ALD-SnO _x缓冲层。通过应用氧化铟锌 (IZO) 的软溅射沉积，我们避免了用有机 BCP 替代 ALD-SnO _x时增加的溅射损坏风险。除了技术优势之外，这还导致开路电压增益 20 mV、类似的电荷提取率以及由于寄生吸收减少而导致的更高的电流密度，如绝对和瞬态光致发光、电流密度-电压、光谱响应度、和瞬态表面光电压测量。将 BCP/IZO 顶部接触集成到串联太阳能电池中，使用 Q CELLS Q.ANTUM 技术的工业硅底电池，我们的无 ALD PSTSC 的经认证功率转换效率可达 29.91%。

更新日期：2024-08-26

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