Recently, metal halide perovskites for neuromorphic information processing have emerged due to their attractive optoelectronic properties such as high photosensitivity and good charge transport. However, perovskites used as active channels in synaptic transistors have rarely been discussed due to the difficulty in controlling the charge-transporting properties. In this study, we realized electrically/optically modulated synaptic plasticity through a heterojunction design consisting of PEA₂SnI₄ and C₆₀. By inserting an ultrathin polyethylenimine ethoxylated (PEIE) layer into the heterostructure, the PEA₂SnI₄ film quality is greatly improved and shows efficient charge-transporting behavior. In electrical modulation, synaptic potentiation and depression are simultaneously achieved by gate voltage modulation. In optical modulation, synaptic plasticity is realized under green light (530 nm) irradiation. Such dual-modulation charge-storage behavior is realized for the first time in perovskite transistors, revealing great potential for future neuromorphic intelligent applications.

中文翻译：

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通过异质结设计揭示钙钛矿晶体管双调制突触行为的潜力


最近，用于神经形态信息处理的金属卤化物钙钛矿因其具有吸引力的光电特性（例如高光敏性和良好的电荷传输）而出现。然而，由于难以控制电荷传输特性，用作突触晶体管有源通道的钙钛矿很少被讨论。在这项研究中，我们通过由PEA ₂ SnI ₄和C ₆₀组成的异质结设计实现了电/光调制的突触可塑性。通过在异质结构中插入超薄聚乙烯亚胺乙氧基化（PEIE）层，PEA ₂ SnI ₄薄膜的质量大大提高，并表现出高效的电荷传输行为。在电调制中，突触增强和抑制是通过栅极电压调制同时实现的。在光调制中，突触可塑性是在绿光（530 nm）照射下实现的。这种双调制电荷存储行为首次在钙钛矿晶体管中实现，揭示了未来神经形态智能应用的巨大潜力。