Enhancement of Photosensitivity in a Low-Operating-Voltage Organic–Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source–Drain Electrode,ACS Photonics

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Enhancement of Photosensitivity in a Low-Operating-Voltage Organic–Inorganic Bilayer Thin-Film Transistor by Using an Asymmetric Source–Drain Electrode
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-26 , DOI: 10.1021/acsphotonics.4c00876
Pijush Kanti Aich ₁ , Zewdneh Genene ₂ , Utkarsh Pandey ₁ , Akhilesh Kumar Yadav ₁ , Ergang Wang ₂ , Bhola Nath Pal ₁

Affiliation

A solution-processed inorganic–organic bilayer semiconductor channel-based red-light-sensitive thin-film transistor (TFT) has been fabricated by using an ion-conducting Li–Al₂O₃ gate dielectric that limits the operating voltage of this TFT within 2 V. In this device, a high-electron-mobility inorganic metal-oxide semiconductor (SnO₂) was used as the primary charge transport layer, whereas the polymer (PIDT-2TPD) was used as the photoactive layer. To improve its red photosensitivity, an asymmetric work function source–drain (S–D) electrode was fabricated, which allows a selective carrier (electron or hole) injection and collection from the channel. Besides, the work function difference of this asymmetric S–D electrode generates a potential difference between electrodes that allows faster charge collection from the channel. As a consequence, the photosensitivity of this asymmetric S–D electrode TFT enhanced by ∼10³ times under red illumination with respect to the symmetric S–D electrode TFT and the detectivity of this device increased ∼20 times. In addition, the on/off ratio of asymmetric TFT is 4 times greater than that of the symmetric TFT, whereas the subthreshold swing (SS) of this TFT is reduced from 200 to 144 mV/decade.

中文翻译：

使用不对称源漏电极增强低工作电压有机-无机双层薄膜晶体管的光敏度

采用溶液处理的无机-有机双层半导体通道基红光敏感薄膜晶体管（TFT），通过使用离子导电的Li-Al ₂ O ₃栅极电介质来制造，该电介质将该TFT的工作电压限制在2 V。在该器件中，高电子迁移率无机金属氧化物半导体（SnO ₂ ）用作主电荷传输层，而聚合物（PIDT-2TPD）用作光敏层。为了提高其红色光敏性，制造了不对称功函数源漏（S-D）电极，它允许选择性载流子（电子或空穴）注入和从通道收集。此外，这种不对称 S-D 电极的功函数差异会在电极之间产生电势差，从而可以更快地从通道收集电荷。结果，相对于对称S-D电极TFT，这种不对称S-D电极TFT在红色照明下的光敏度提高了~10 ³倍，并且该器件的检测率提高了~20倍。此外，非对称TFT的开/关比是对称TFT的4倍，而该TFT的亚阈值摆幅(SS)从200mV/decade降低到144mV/decade。

更新日期：2024-08-26

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