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Continuing challenges in 2D semiconductors
Nature Electronics ( IF 33.7 ) Pub Date : 2024-08-28 , DOI: 10.1038/s41928-024-01241-w


The further development of transistors based on two-dimensional transition metal dichalcogenides faces various issues, starting with the high density of defects typically found in the materials.

中文翻译:


二维半导体面临的持续挑战



基于二维过渡金属二硫属化物的晶体管的进一步开发面临着各种问题,首先是材料中通常发现的高密度缺陷。
更新日期:2024-08-28
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