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Photocontrolled ultra-broadband metamaterial absorber around the terahertz regime
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2024-08-27 , DOI: 10.1039/d4cp02809k
Guozheng Wu 1, 2 , Chao Li 1, 2 , Dong Wang 1, 2 , Song Gao 1, 2 , Haijun Guo 1, 2 , Wenya Chen 1, 2 , Shijing Guo 1, 2 , Jiaran Xiong 1, 2 , Yue Che 3
Affiliation  

In this paper, we innovatively stack multiple resonant units of photoconductive silicon to design an ultra-broadband metamaterial absorber. By manipulating the conductivity of the silicon with a pump beam, adjustments are made to the amplitude of the wide absorption spectrum spanning 6.6 THz, enabling functional switching from total reflection to near-perfect ultra-broadband absorption. By integrating vanadium dioxide as an intermediary layer, a dual-mode switchable absorber is realized, offering dual control functionalities. Temperature changes enable the absorber to switch between dual-band absorption and ultra-broadband absorption, while variations in pump beam intensity allow for further amplitude adjustments within the absorption spectrum. Impedance matching theory and near-field analysis provide the necessary physical foundation for understanding broadband absorption. Structural parameters, incident angle, and polarization angle of the incident electromagnetic waves are also studied to demonstrate the device's robustness. Our proposed absorbers not only greatly broaden the absorption bandwidth of silicon-based absorbers, but also offer versatility, polarization insensitivity, and robustness over a wide range of incidence angles. Moreover, our design ideas are useful for broadening the bandwidth and enhancing absorption, which enables wider applications in ultra-broadband terahertz absorption and promises extensive prospects.

中文翻译:


太赫兹区域光控超宽带超材料吸收器



在本文中,我们创新性地堆叠多个光电导硅谐振单元来设计超宽带超材料吸收器。通过用泵浦光束操纵硅的电导率,可以调整跨越 6.6 THz 的宽吸收光谱的幅度,从而实现从全反射到近乎完美的超宽带吸收的功能切换。通过集成二氧化钒作为中间层,实现了双模式可切换吸收器,提供双重控制功能。温度变化使吸收器能够在双波段吸收和超宽带吸收之间切换,而泵浦光束强度的变化允许在吸收光谱内进一步调整幅度。阻抗匹配理论和近场分析为理解宽带吸收提供了必要的物理基础。还研究了入射电磁波的结构参数、入射角和偏振角,以证明该器件的鲁棒性。我们提出的吸收器不仅极大地拓宽了硅基吸收器的吸收带宽,而且还提供了多功能性、偏振不敏感性以及在宽入射角范围内的鲁棒性。此外,我们的设计思想有助于拓宽带宽和增强吸收,使得超宽带太赫兹吸收有更广泛的应用,前景广阔。
更新日期:2024-08-27
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