Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance. Layered hexagonal boron nitride (h-BN) can form a defect-free interface with 2D semiconductors, but when prepared by industry-compatible methods—such as chemical vapour deposition (CVD)—the presence of native defects increases leakage current and reduces dielectric strength. Here we show that metal gate electrodes with a high cohesive energy—platinum and tungsten—can allow CVD-grown layered h-BN to be used as a gate dielectric in transistors. The electrodes can reduce the current across CVD-grown h-BN by a factor of around 500 compared to similar devices with gold electrodes and can provide a high dielectric strength of at least 25 MV cm⁻¹. We examine the behaviour statistically across 867 devices, which includes a microchip based on complementary metal–oxide–semiconductor technology.

二维 (2D) 半导体有可能用作商用场效应晶体管中的沟道材料。然而，二维半导体和大多数栅极电介质之间的界面包含会降低性能的陷阱。层状六方氮化硼 (h-BN) 可以与 2D 半导体形成无缺陷界面，但当采用化学气相沉积 (CVD) 等工业兼容方法制备时，固有缺陷的存在会增加漏电流并降低介电强度。在这里，我们展示了具有高内聚能的金属栅电极（铂和钨）可以允许 CVD 生长的层状 h-BN 用作晶体管中的栅极电介质。与具有金电极的类似器件相比，这些电极可以将 CVD 生长的 h-BN 上的电流减少约 500 倍，并且可以提供至少 25 MV cm ^-1的高介电强度。我们对 867 种设备的行为进行了统计分析，其中包括基于互补金属氧化物半导体技术的微芯片。