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Enhanced Response of Si-Based PbSe Thin Film MSM Photodetectors by Photon-Trapping Hole Array in the Surface
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-23 , DOI: 10.1021/acsphotonics.4c00817 Han Dou 1 , Lixin Liu 1 , Jun Gou 1, 2, 3 , Chunyu Li 1 , Xiutao Yang 1 , Jin Chen 1 , Jiayue Han 1 , Hongxi Zhou 1, 2 , He Yu 1, 2 , Zhiming Wu 1, 2 , Jun Wang 1, 2
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-23 , DOI: 10.1021/acsphotonics.4c00817 Han Dou 1 , Lixin Liu 1 , Jun Gou 1, 2, 3 , Chunyu Li 1 , Xiutao Yang 1 , Jin Chen 1 , Jiayue Han 1 , Hongxi Zhou 1, 2 , He Yu 1, 2 , Zhiming Wu 1, 2 , Jun Wang 1, 2
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A Si-based PbSe thin film metal–semiconductor–metal (MSM) photodetector with enhanced efficiency in a wide spectral range is demonstrated with an integrated photon-trapping hole array in the surface. Based on the finite difference time domain method, the effects of film thickness, substrate, hole structure (diameter, period, and depth), and top electrodes on the infrared absorption of the photodetector are studied to optimize the device structure. The photon-trapping hole array effectively reduces the surface reflection and induces laterally slow propagating modes of the vertically incident light within the device, thereby achieving enhanced absorption. Additionally, the peak absorption wavelength can be tuned by changing the period of the holes. Several Si-based PbSe thin film MSM photodetectors with various hole structures are fabricated, and the measured efficiency agrees well with the theoretical prediction of infrared absorption. The photodetector with a hole array in a square lattice with a diameter/period ratio (d/p) of 700/1000 nm achieves a responsivity of 0.449 A/W at 808 nm. Compared to the device without hole structures, the responsivities at 808, 1064, 1310, and 1550 nm show significant enhancements of 225%, 267%, 334%, and 357%, respectively. The specific detectivity reaches 1.474 × 109 Jones at 808 nm and 9.3 × 108 Jones at 1550 nm. This study provides a new approach for the Si-based single-chip-integrated photodetectors with high efficiency over a broad spectral range, which makes the microhole-enabled Si-based PbSe MSM photodiodes promising to cover C, L, and even wider bands for low-cost infrared sensing and communication applications.
中文翻译：
通过表面光子捕获孔阵列增强硅基 PbSe 薄膜 MSM 光电探测器的响应
硅基 PbSe 薄膜金属-半导体-金属 (MSM) 光电探测器在宽光谱范围内具有增强的效率，其表面集成了光子捕获孔阵列。基于时域有限差分法，研究了薄膜厚度、衬底、孔结构（直径、周期和深度）和顶部电极对光电探测器红外吸收的影响，优化器件结构。光子捕获孔阵列有效地减少了表面反射，并在器件内诱导垂直入射光的横向慢传播模式，从而实现增强的吸收。此外，可以通过改变空穴的周期来调节峰值吸收波长。制备了几种具有不同孔结构的硅基PbSe薄膜MSM光电探测器，测量的效率与红外吸收的理论预测非常吻合。具有直径/周期比 ( d / p ) 为 700/1000 nm 的方晶格孔阵列的光电探测器在 808 nm 处实现了 0.449 A/W 的响应度。与没有孔结构的器件相比，808、1064、1310和1550 nm处的响应度分别显着增强了225%、267%、334%和357%。比探测率在808 nm处达到1.474×10 9 Jones，在1550 nm处达到9.3×10 8 Jones。这项研究为硅基单芯片集成光电探测器提供了一种在宽光谱范围内具有高效率的新方法，这使得微孔硅基PbSe MSM光电二极管有望覆盖C 、 L甚至更宽的波段。低成本红外传感和通信应用。
更新日期：2024-08-23
中文翻译：
通过表面光子捕获孔阵列增强硅基 PbSe 薄膜 MSM 光电探测器的响应
硅基 PbSe 薄膜金属-半导体-金属 (MSM) 光电探测器在宽光谱范围内具有增强的效率，其表面集成了光子捕获孔阵列。基于时域有限差分法，研究了薄膜厚度、衬底、孔结构（直径、周期和深度）和顶部电极对光电探测器红外吸收的影响，优化器件结构。光子捕获孔阵列有效地减少了表面反射，并在器件内诱导垂直入射光的横向慢传播模式，从而实现增强的吸收。此外，可以通过改变空穴的周期来调节峰值吸收波长。制备了几种具有不同孔结构的硅基PbSe薄膜MSM光电探测器，测量的效率与红外吸收的理论预测非常吻合。具有直径/周期比 ( d / p ) 为 700/1000 nm 的方晶格孔阵列的光电探测器在 808 nm 处实现了 0.449 A/W 的响应度。与没有孔结构的器件相比，808、1064、1310和1550 nm处的响应度分别显着增强了225%、267%、334%和357%。比探测率在808 nm处达到1.474×10 9 Jones，在1550 nm处达到9.3×10 8 Jones。这项研究为硅基单芯片集成光电探测器提供了一种在宽光谱范围内具有高效率的新方法，这使得微孔硅基PbSe MSM光电二极管有望覆盖C 、 L甚至更宽的波段。低成本红外传感和通信应用。
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