Magnetic films with perpendicular magnetic anisotropy (PMA) are the basis for efficient memory-storage and future spintronic devices. PMA predominantly stems from surface effects, e.g., symmetry reduction, at the magnetic-layer interface and quickly decays with increasing layer thickness. Strong PMA is thus typically observed in sub-nanometer multilayers with alternating magnetic and noble metals. Using in-situ temperature-dependent measurements of ferromagnetic resonance it is demonstrated that strong PMA can be achieved in Si/Ni multilayers with individual layer as thick as 16 nm. Here, PMA is imposed by thermal strains acting via magnetoelastic coupling and directly depends on the annealing temperature and time, which regulate the diffusion-driven plastic deformation. This opens a way to PMA-film fabrication that avoids complex and resource-intensive production of atomically thin multilayers.

中文翻译：

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由热应变和扩散驱动的塑性变形相互作用引起的多层垂直磁各向异性


具有垂直磁各向异性（PMA）的磁性薄膜是高效存储器和未来自旋电子器件的基础。 PMA 主要源于磁性层界面处的表面效应，例如对称性降低，并随着层厚度的增加而快速衰减。因此，强 PMA 通常在磁性金属和贵金属交替的亚纳米多层中观察到。使用铁磁共振的原位温度相关测量，证明可以在单层厚度为 16 nm 的 Si/Ni 多层中实现强 PMA。在这里，PMA 由通过磁弹性耦合作用的热应变施加，并直接取决于退火温度和时间，从而调节扩散驱动的塑性变形。这为 PMA 薄膜制造开辟了一条途径，避免了原子级薄多层膜的复杂且资源密集型生产。