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A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network
IEEE Transactions on Power Electronics ( IF 6.6 ) Pub Date : 2024-08-21 , DOI: 10.1109/tpel.2024.3447568
Tahmid Ibne Mannan 1 , Ashik Amin 2 , Seungdeog Choi 1 , Mostak Mohammad 3
Affiliation  

This article presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated wide-bandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode or differential mode). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility. However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This article addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50 Ω/50 µH LISN with 1.5 kV, 75 A and 30 MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300 kVA MV EMI testbed.

中文翻译:


紧凑型单级 >1 kV 中压线路阻抗稳定网络



本文介绍了适用于中压 (MV) 应用的单相、单级线路阻抗稳定网络 (LISN) 的设计。额定值超过 1 kV 的宽带隙 (WBG) 功率半导体开关越来越多地应用于新型电力电子能源系统中,以提高功率密度和效率。然而,由于固有的快速开关速度,WBG开关模块会发出相当大的电磁干扰(EMI)(例如共模或差模)。最先进的提供标准化 LISN 解决方案来验证和认证新能源系统的电磁兼容性。然而,大多数用于低压应用(即< 1 kV)。直到最近,MV LISN(即 > 1 kV)才很少见,文献也没有提供足够的指导来设计和表征此类设备。对许多科学家和工程师来说,可靠地认证新兴的中压能源系统(例如电动船舶和飞机)一直是一个严峻的挑战。本文解决了这样的技术差距。具体来说,我们提出了一种符合 CISPR 16-1-2 标准、具有 1.5 kV、75 A 和 30 MHz 测量能力的 50 Ω/50 µH LISN。已经完成了中压电感器和电容器中非线性寄生参数变化的详细性能研究。基于新的理解,人们提出了直观地减轻不需要的寄生效应的新技术,以成功开发所提出的 LISN。对重要的 LISN 参数进行了全面的描述,并分析了影响这些参数的因素。我们进行了严格的分析、实验测试以及与最先进技术的深入比较,以验证其有效性。这是通过最先进的 300 kVA MV EMI 测试台完成的。
更新日期:2024-08-21
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