Component Engineering in Multinary Alloyed I-III-VI Type Semiconductor Nanocrystals for Photoluminescence and Electroluminescence,Accounts of Materials Research

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Component Engineering in Multinary Alloyed I-III-VI Type Semiconductor Nanocrystals for Photoluminescence and Electroluminescence
Accounts of Materials Research ( IF 14.0 ) Pub Date : 2024-08-21 , DOI: 10.1021/accountsmr.4c00161
Lijin Wang _{1,

2} , Zhe Yin ₁ , Aiwei Tang ₁

Affiliation

Display technologies have been developed in an unprecedented way in the past one hundred years. The evolution of display technologies is remarkable, progressing from the initial cathode ray tube and rear projection technology to the second-generation advancements of plasma and liquid crystal displays. Now, with the ongoing development of light-emitting diodes (LEDs) technology, including organic LEDs (OLEDs) and quantum dot LEDs (QD-LEDs), we are looking forward to a transition toward mini-LED, micro-LED, and nano-LED technologies. This evolution is gradually rendering displays thinner, more convenient, high-definition, highly luminous, and cost-effective. At present, commercially available OLEDs technology is afflicted with drawbacks such as intricate solution processing, difficulties in achieving efficient mass production, and suboptimal stability, limiting its widespread adoption. QD-LEDs serve as a perfect complement to the limitations of OLEDs and demonstrate a large potential for application in the next generation of displays. Quantum dots (QDs) are nanocrystals (NCs) with a size of 1–10 nm. Since the 1980s, researchers have studied and developed these magic tiny particles. At present, Cd-based materials have been extensively studied, resulting in red-, green-, and blue-LEDs devices approaching or surpassing theoretical external quantum efficiency limits. And the lifetime of Cd-based LEDs has reached commercial standards expected for blue-LEDs. However, the intrinsic toxicity of Cd element limits their further development. In the past decades, several Cd-free QDs have been developed and extensively researched, including III-V type InP QDs, perovskite QDs, I-III-VI type QDs, II-VI type ZnSe QDs, carbon dots, and so on. Among these Cd-free QDs, I-III-VI type semiconductor nanocrystals demonstrate remarkable potential due to facile synthesis, large tunable luminescence range, and solution processability. Moreover, owing to its distinctive nonstoichiometric composition, the luminescence peak position can be readily tuned from the blue to near-infrared by means of straightforward component engineering. This Account presents an overview of the I-III-VI type NCs, starting with the photoluminescent properties regulated by component engineering. Interestingly, narrow-band emission can also be realized through component engineering. Then the construction of light-emitting diodes based on these materials is discussed, encompassing wide-band and narrow-band emission. Additionally, interface engineering is adopted for balancing carrier injection to enhance electroluminescent properties. Moreover, taking advantage of the wide-band emission characteristics of I-III-VI type NCs, white LEDs with high color rendering index can be fabricated by incorporating other blue-emitting materials. Finally, the present challenges and prospective solutions are proposed to propel the advancement of I-III-VI type NCs with high expectations.

中文翻译：

用于光致发光和电致发光的多元合金 I-III-VI 型半导体纳米晶的元件工程

在过去的一百年里，显示技术以前所未有的方式发展。显示技术的发展是显着的，从最初的阴极射线管和背投技术发展到等离子和液晶显示器的第二代进步。现在，随着发光二极管（LED）技术的不断发展，包括有机 LED （OLED）和量子点 LED （QD-LED），我们期待着向 mini-LED、micro-LED 和 nano-LED 技术的过渡。这种演变逐渐使显示器更薄、更方便、高清晰度、高亮度和成本效益。目前，市售的 OLED 技术存在溶液处理复杂、难以实现高效批量生产和稳定性不佳等缺点，限制了其广泛采用。QD-LED 是对 OLED 局限性的完美补充，并在下一代显示器中展示了巨大的应用潜力。量子点（QD）是尺寸为 1-10 nm 的纳米晶体（NC）。自 1980 年代以来，研究人员一直在研究和开发这些神奇的微小粒子。目前，基于 Cd 的材料已被广泛研究，导致红光、绿光和蓝光 LED 器件接近或超过理论上的外部量子效率极限。基于 CD 的 LED 的使用寿命已达到蓝光 LED 预期的商业标准。然而，Cd 元件的内在毒性限制了它们的进一步发展。在过去的几十年里，已经开发了几种无镉的快速插拔接头并进行了广泛的研究，包括 III-V 型 InP 快速插拔接头、钙钛矿快速插拔接头、I-III-VI 型快速插拔接头、II-VI 型 ZnSe 快速插拔接头、碳点等。在这些无 Cd 的 QD 中，I-III-VI 型半导体纳米晶由于合成简单、可调发光范围大和溶液加工性而表现出非凡的潜力。此外，由于其独特的非化学计量组成，可以通过简单的组件工程轻松地将发光峰位置从蓝色调整到近红外。本账户概述了 I-III-VI 型 NC，从组件工程规定的光致发光特性开始。有趣的是，窄带发射也可以通过组件工程来实现。然后讨论了基于这些材料的发光二极管的构造，包括宽带和窄带发射。此外，采用界面工程来平衡载流子注入以增强电致发光性能。此外，利用 I-III-VI 型 NC 的宽带发射特性，可以通过结合其他蓝光发射材料来制造具有高显色指数的白光 LED。最后，提出了目前的挑战和前瞻性的解决方案，以推动 I-III-VI 型 NC 的发展，并寄予厚望。

更新日期：2024-08-21

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