GaAs Microdisk Lasers with Al2O3 Passivation Selectively Grown on SOI,ACS Photonics

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GaAs Microdisk Lasers with Al2O3 Passivation Selectively Grown on SOI
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-21 , DOI: 10.1021/acsphotonics.4c00527
Qi Lin ₁ , Jie Huang ₁ , Ying Xue ₁ , Liying Lin ₂ , Zengshan Xing ₃ , Kam Sing Wong ₃ , Kei May Lau _{1,

2}

Affiliation

The development of Si photonics requires efficient on-chip light sources to achieve low-cost and high-throughput systems. One promising approach is direct epitaxy of III–V materials on Si using selective growth, which has attracted extensive attention. The lateral aspect ratio trapping (LART) growth technique is used to monolithically integrate III–V materials with adjustable dimensions and without the need for thick transition buffer layers on Si. It also enables easy light coupling between selectively grown lasers and Si-based waveguides and provides various dimensions for diverse device fabrication. In this study, we report the characteristics of low-threshold optically pumped GaAs microdisk lasers (MDLs) on Si-on-insulator (SOI) grown by the LART technique. We investigated the effect of the Al₂O₃ passivation layer on the laser performance, including deposition temperature and thickness of the passivation. Under pulsed optical pumping, the MDLs exhibited room-temperature lasing with a low threshold down to 80 μJ/cm². The highest operating temperature of the device was 85 °C. Our study demonstrates the potential of GaAs LART on an SOI platform for future dense integration. The fabrication of microlasers with whispering gallery mode cavities shows that this approach can enable the development of efficient on-chip laser sources for Si photonics.

中文翻译：

在 SOI 上选择性生长 Al2O3 钝化的 GaAs 微盘激光器

硅光子学的发展需要高效的片上光源来实现低成本、高通量的系统。一种有前途的方法是利用选择性生长在硅上直接外延 III-V 族材料，这引起了广泛的关注。横向纵横比捕获 (LART) 生长技术用于单片集成尺寸可调的 III-V 族材料，且无需在 Si 上使用厚的过渡缓冲层。它还可以实现选择性生长的激光器和硅基波导之间的轻松光耦合，并为不同的器件制造提供不同的尺寸。在这项研究中，我们报告了采用 LART 技术生长的绝缘体上硅 (SOI) 上的低阈值光泵浦 GaAs 微盘激光器 (MDL) 的特性。我们研究了Al ₂ O ₃钝化层对激光性能的影响，包括沉积温度和钝化层厚度。在脉冲光泵浦下，MDL 表现出阈值低至 80 μJ/cm ²的室温激光。该装置的最高工作温度为85℃。我们的研究证明了 GaAs LART 在 SOI 平台上用于未来密集集成的潜力。具有回音壁模式腔的微型激光器的制造表明，这种方法可以为硅光子学开发高效的片上激光源。

更新日期：2024-08-21

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