Quantum materials are often characterized by a marked sensitivity to minute changes in their physical environment, a property that can lead to new functionalities and thereby, to novel applications. One such key property is the magneto-elastoresistance (MER), the change in magnetoresistance (MR) of a metal induced by uniaxial strain. Understanding and modeling this response can prove challenging, particularly in systems with complex Fermi surfaces. Here, we present a thorough analysis of the MER in the nearly compensated Dirac nodal-line semi-metal ZrSiSe. Small amounts of strain (0.27%) lead to large changes (7%) in the MR. Subsequent analysis reveals that the MER response is driven primarily by a change in transport mobility that varies linearly with the applied strain. This study showcases how the effect of strain tuning on the electrical properties can be both qualitatively and quantitatively understood. A complementary Shubnikov-de Haas oscillation study sheds light on the root of this change in quantum mobility. Moreover, we unambiguously show that the Fermi surface consists of distinct electron and hole pockets revealed in quantum oscillation measurements originating from magnetic breakdown.

量子材料的特点通常是对其物理环境的微小变化具有显着的敏感性，这种特性可以带来新的功能，从而带来新的应用。其中一个关键特性是磁弹性电阻 (MER)，即单轴应变引起的金属磁阻 (MR) 变化。理解和建模这种响应可能具有挑战性，特别是在具有复杂费米表面的系统中。在这里，我们对近补偿狄拉克节点线半金属 ZrSiSe 中的 MER 进行了全面分析。少量应变 (0.27%) 会导致 MR 发生较大变化 (7%)。随后的分析表明，MER 响应主要是由传输迁移率的变化驱动的，传输迁移率随施加的应变呈线性变化。这项研究展示了如何定性和定量地理解应变调谐对电性能的影响。一项补充性的舒布尼科夫-德哈斯振荡研究揭示了量子迁移率变化的根源。此外，我们明确表明，费米表面由不同的电子和空穴袋组成，这些电子和空穴袋是在源自磁击穿的量子振荡测量中揭示的。