High Performance Memristors Based on Imine-Linked Covalent Organic Frameworks Obtained Using a Protonation Modification Strategy,Angewandte Chemie International Edition

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High Performance Memristors Based on Imine-Linked Covalent Organic Frameworks Obtained Using a Protonation Modification Strategy
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2024-08-18 , DOI: 10.1002/anie.202409926
Qian Che _{1,

2} , Chenyu Li _{1,

2} , Zhihui Chen _{1,

2} , Shuai Yang _{1,

2} , Weifeng Zhang _{1,

2} , Gui Yu _{1,

2}

Affiliation

A protonation-modification strategy has been employed to modify imine-linked donor-acceptor (D-A) type covalent organic frameworks (COFs), significantly improving the electron delocalization capabilities of the imine bonds and constructing advanced memory devices. The obtained novel COF-BTT-TAPT@PTSA thin film-based rewritable memristors exhibit high ON/OFF current ratio (ca. 10⁵) and unprecedented endurance (more than 1300 number of cycles).

中文翻译：

基于使用质子化修饰策略获得的亚胺连接的共价有机框架的高性能忆阻器

已采用质子化修饰策略修饰亚胺连接的供体-受体（D-A）型共价有机框架（COFs），显著提高亚胺键的电子离域能力并构建先进的存储器件。获得的新型 COF-BTT-TAPT@PTSA 薄膜基可重写忆阻器表现出高 ON/OFF 电流比（约 10⁵）和前所未有的耐用性（超过 1300 次循环）。

更新日期：2024-08-18

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