Two-Dimensional Photonic Crystal Cavities in ZnSe Quantum Well Structures,ACS Photonics

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Two-Dimensional Photonic Crystal Cavities in ZnSe Quantum Well Structures
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-15 , DOI: 10.1021/acsphotonics.4c00340
Siqi Qiao _{1,

2} , Nils von den Driesch _{2,

3} , Xi Chen ₄ , Stefan Trellenkamp ₅ , Florian Lentz ₅ , Christoph Krause ₃ , Benjamin Bennemann ₃ , Thorsten Brazda ₁ , Jeremy Witzens ₆ , James M. LeBeau ₄ , Alexander Pawlis _{1,

2,

3}

Affiliation

ZnSe and related materials like ZnMgSe and ZnCdSe are promising II–VI host materials for optically mediated quantum information technology such as single photon sources (SPS) or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example, realizing Purcell-enhanced SPS with increased quantum efficiency. Here, we report on the implementation of two-dimensional (2D) PC cavities in strained ZnSe quantum wells on top of a novel AlAs supporting layer. This approach overcomes typical obstacles associated with PC membrane fabrication in strained materials, such as cracks and strain relaxation in the corresponding devices. We demonstrate the attainment of the required mechanical stability in our PC devices, complete strain retainment, and effective vertical optical confinement. The structural analysis of our PC cavities reveals excellent etching anisotropy. Additionally, elemental mapping in a scanning transmission electron microscope confirms the transformation of AlAs into AlO_x by postgrowth wet oxidation and reveals partial oxidation of ZnMgSe at the etched sidewalls in the PC. This knowledge is utilized to tailor finite domain time difference simulations and to extract the ZnMgSe dispersion relation with small oxygen content. Optical characterization of the PC cavities with cross-polarized resonance scattering verifies the presence of the cavity modes. The excellent agreement between simulation and measured cavity mode energies demonstrates the wide tunability of the PC cavity and proves the pertinence of our model. This implementation of 2D PC cavities in the ZnSe material system establishes a solid foundation for the future development of ZnSe quantum devices.

中文翻译：

ZnSe 量子阱结构中的二维光子晶体腔

ZnSe 和相关材料（如 ZnMgSe 和 ZnCdSe）是用于光介导量子信息技术（例如单光子源（SPS）或自旋量子位）的有前景的 II-VI 主体材料。将这些异质结构集成到光子晶体 (PC) 腔中可以实现进一步的改进，例如，实现具有更高量子效率的 Purcell 增强型 SPS。在这里，我们报告了在新型 AlAs 支撑层顶部的应变 ZnSe 量子阱中实现二维 (2D) PC 腔。这种方法克服了与应变材料中 PC 膜制造相关的典型障碍，例如相应器件中的裂纹和应变松弛。我们证明了我们的 PC 设备达到了所需的机械稳定性、完整的应变保留和有效的垂直光学限制。我们的 PC 腔体的结构分析揭示了出色的蚀刻各向异性。此外，扫描透射电子显微镜中的元素分布证实了 AlAs 通过生长后湿氧化转化为 AlO _x ，并揭示了 PC 中蚀刻侧壁处 ZnMgSe 的部分氧化。这些知识可用于定制有限域时差模拟并提取具有小氧含量的 ZnMgSe 色散关系。具有交叉偏振共振散射的 PC 腔的光学特性验证了腔模式的存在。仿真和测量的腔模能量之间的良好一致性证明了 PC 腔的广泛可调性，并证明了我们模型的相关性。在 ZnSe 材料系统中实现 2D PC 腔为 ZnSe 量子器件的未来发展奠定了坚实的基础。

更新日期：2024-08-15

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