Data-driven computing is highly dependent on memory performance. Flash memory is presently the dominant non-volatile memory technology but suffers from limitations in terms of speed. Two-dimensional (2D) materials could potentially be used to create ultrafast flash memory. However, due to interface engineering problems, ultrafast non-volatile performance is presently restricted to exfoliated 2D materials, and there is a lack of performance demonstrations with short-channel devices. Here, we report a scalable integration process for ultrafast 2D flash memory that can be used to integrate 1,024 flash-memory devices with a yield of over 98%. We illustrate the approach with two different tunnelling barrier configurations of the memory stack (HfO₂/Pt/HfO₂ and Al₂O₃/Pt/Al₂O₃) and using transferred chemical vapour deposition-grown monolayer molybdenum disulfide. We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non-volatile information storage (up to 4 bits) and robust endurance (over 10⁵).

数据驱动的计算高度依赖于内存性能。闪存是目前占主导地位的非易失性存储技术，但在速度方面受到限制。二维 (2D) 材料有可能用于制造超快闪存。然而，由于界面工程问题，超快非易失性性能目前仅限于剥离型二维材料，并且缺乏短沟道器件的性能演示。在此，我们报告了一种超快 2D 闪存的可扩展集成工艺，可用于集成 1,024 个闪存器件，良率超过 98%。我们使用存储堆栈的两种不同隧道势垒配置（HfO ₂ /Pt/HfO ₂和 Al ₂ O ₃ /Pt/Al ₂ O ₃ ）并使用转移化学气相沉积生长的单层二硫化钼来说明该方法。我们还表明，超快闪存的通道长度可以缩小到 10 nm 以下，低于硅闪存的物理极限。我们的 10 nm 以下器件提供非易失性信息存储（高达 4 位）和强大的耐用性（超过 10 ⁵ ）。