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Large-Area Epitaxial Growth of Transition Metal Dichalcogenides
Chemical Reviews ( IF 51.4 ) Pub Date : 2024-08-12 , DOI: 10.1021/acs.chemrev.3c00851
Guodong Xue 1, 2 , Biao Qin 1 , Chaojie Ma 1 , Peng Yin 3 , Can Liu 3 , Kaihui Liu 1, 4, 5
Affiliation  

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin–orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

中文翻译:


过渡金属二硫属化物的大面积外延生长



在过去的十年中,由于其独特的性质(例如高载流子迁移率、显着的激子效应和强自旋轨道耦合),对原子薄二维(2D)过渡金属二硫属化物(TMD)的研究迅速扩展。科学界和工业界的高度关注充分推动了TMDs对实际应用的探索。超大规模晶体管、片上光子学、柔性光电子学和高效电催化等拟议方案主要取决于大面积 TMD 薄膜的规模化生产。相应地,人们在二维TMDs的合成方法的完善上投入了大量的精力,这使得该领域进入了一个需要全面总结的阶段。在这篇综述中,我们系统地概述了 TMD 大面积外延生长的基本设计和重大进展。我们首先勾勒出它们的基本结构和不同的性质。随后的讨论涵盖最先进的晶圆级生产设计、单晶外延策略以及结构修改和后处理技术。此外,我们强调了应用驱动的材料制造的未来方向和持续的挑战,旨在激发现代半导体行业革命的持续探索。
更新日期:2024-08-12
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