In this work, CdO–SnO thin films were deposited using the magnetron Co-sputtering technique. The presence of single-phase Cadmium Stannate (CdSnO) films was verified by X-ray diffraction (XRD) of the as-prepared and irradiated films. The obtained results reveal that crystallite size () increasing by gamma irradiation up to 50 kGY and then seem to be not affected by increasing the dose of gamma radiation for the different phases. The resulting dislocation density and number of crystallites per unit area (N) decreased irradiation of gamma till 50 kGY and seem to be not affected by increasing gamma irradiation. The microstrain did not show systematic variations with gamma dose. The refractive index of un-irradiated and irradiated films showed normal dispersion. Aurbach tail E, plasma frequency (), and third order susceptibility increased by irradiation and seem to be not affected by increasing gamma dose beyond 50 kGY. In contrast, the optical energy gap found to be decrease by irradiation and seem to be not affected by increasing gamma dose beyond 50 kGY. Other optical parameters, including the absorption coefficient, and dispersion energies, are investigated before and after gamma irradiation.

中文翻译：

---

伽马辐照对磁控共溅射 CdO-SnO2 薄膜线性和非线性光学性能的影响


在这项工作中，使用磁控共溅射技术沉积了 CdO-SnO 薄膜。通过对所制备和辐照的薄膜进行 X 射线衍射 (XRD) 验证了单相锡酸镉 (CdSnO) 薄膜的存在。获得的结果表明，当伽马辐射达到 50 kGY 时，微晶尺寸 () 增加，然后似乎不受不同相伽马辐射剂量增加的影响。由此产生的位错密度和每单位面积 (N) 的微晶数量将伽马辐照降低至 50 kGY，并且似乎不受伽马辐照增加的影响。微应变没有显示出随伽马剂量的系统变化。未照射和照射薄膜的折射率显示出正常色散。奥尔巴赫尾 E、血浆频率 () 和三阶磁化率因辐射而增加，并且似乎不受伽马剂量增加超过 50 kGY 的影响。相反，光学能隙因照射而减小，并且似乎不受伽马剂量增加超过 50 kGY 的影响。在伽马辐射之前和之后研究了其他光学参数，包括吸收系数和色散能。