Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation,ACS Photonics

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Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation
ACS Photonics ( IF 6.5 ) Pub Date : 2024-08-09 , DOI: 10.1021/acsphotonics.4c00433
Andrei Luferau _{1,

2} , Maximilian Obst _{2,

3} , Stephan Winnerl ₁ , Alexej Pashkin ₁ , Susanne C. Kehr _{2,

3} , Emmanouil Dimakis ₁ , Felix G. Kaps _{2,

3} , Osama Hatem _{2,

3,

4} , Kalliopi Mavridou _{1,

2} , Lukas M. Eng _{2,

3} , Manfred Helm _{1,

2}

Affiliation

We report terahertz (THz)-pump/mid-infrared probe near-field studies on Si-doped GaAs–InGaAs core–shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both the L- and X-valleys. The two-temperature model is utilized for quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels.

中文翻译：

强太赫兹激励下半导体纳米线的热电子动力学

我们报告了利用自由电子激光器 FELBE 的太赫兹辐射对硅掺杂 GaAs-InGaAs 核壳纳米线进行太赫兹 (THz) 泵浦/中红外探针近场研究。在太赫兹激发自由载流子时，我们在振幅和相位光谱中观察到等离子体共振的红移，我们将其归因于导带中电子的加热。加热电子分布的模拟预计 L 谷和 X 谷中都会有大量电子。利用双温度模型对不同功率水平下太赫兹泵浦下电子气温度的动态进行定量分析。

更新日期：2024-08-09

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