Achieving extremely low specific contact resistance () has become a critical challenge for nanoelectronics to achieve high device performance with increased miniaturization. In this work, we explore the use of Tellurium hyperdoping and millisecond-range post-metallization flash lamp annealing as a potential solution to overcome this bottleneck. The epitaxially-resolidified hyperdoped Si layers with tunable carrier densities approaching 10 cm are achieved, which consequently alters the band diagrams as simulated by COMSOL Multiphysics®. This results in a sufficiently narrow Schottky barrier, which enables electron tunneling and can ultimately achieve extremely low on the order of 10 Ω·cm in an Au/Ti/Te-hyperdoped Si junction. This study introduces an alternative fabrication process for Schottky barrier engineering, providing a viable method for the realization of future miniaturized nanoelectronics devices with high carrier density and extremely low .

中文翻译：

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通过Te超掺杂和毫秒金属化后退火在Si中实现超低接触电阻率


实现极低的比接触电阻 () 已成为纳米电子学在小型化的同时实现高器件性能的关键挑战。在这项工作中，我们探索使用碲超掺杂和毫秒范围后金属化闪光灯退火作为克服这一瓶颈的潜在解决方案。外延再凝固的超掺杂硅层的可调载流子密度接近 10 cm，从而改变了 COMSOL Multiphysics® 模拟的能带图。这会产生足够窄的肖特基势垒，从而实现电子隧道效应，并最终在 Au/Ti/Te 超掺杂 Si 结中实现 10 Ω·cm 数量级的极低势垒。这项研究介绍了肖特基势垒工程的替代制造工艺，为实现未来具有高载流子密度和极低载流子密度的小型化纳米电子器件提供了可行的方法。