In response to growing demands on data traffic, silicon (Si) photonics has emerged as a promising technology for ultra-high-speed and low-cost optical interconnects. However, achieving high-performance photodetectors with Si photonics requires integrating narrower-bandgap materials, resulting in more complex fabrication processes, higher costs and yield issues. To address this challenge, we demonstrate an all-Si receiver (RX) based on a cost-efficient, eight-channel, double-microring-resonator, avalanche photodiode. It has an aggregate data rate of 1.28 Tb s⁻¹. All channels show excellent uniformity in their device performance with a responsivity of 0.4 A W⁻¹, an ultra-low dark current of 1 nA, a high bandwidth of 40 GHz at −8 V and a \(k\) value of 0.28. To the best of our knowledge, this is the first demonstration of an all-Si RX supporting a record-high transmission data rate of 160 Gb s⁻¹ per channel, along with an ultra-low electrical crosstalk of less than −50 dB. This all-Si optical RX can compete with the commercial heterojunction-based RXs and promises ~40% chip cost saving, thus paving the way to realizing >3.2 Tb s⁻¹ interconnects for future optical networks.

为了满足不断增长的数据流量需求，硅 (Si) 光子学已成为一种有前景的超高速和低成本光学互连技术。然而，利用硅光子学实现高性能光电探测器需要集成更窄带隙的材料，从而导致更复杂的制造工艺、更高的成本和产量问题。为了应对这一挑战，我们展示了一种基于经济高效的八通道双微环谐振器雪崩光电二极管的全硅接收器 (RX)。它的总数据速率为1.28 Tb s ^-1 。所有通道的器件性能均表现出出色的一致性，响应度为 0.4 AW ^-1 ，超低暗电流为 1 nA，在 -8 V 时具有 40 GHz 的高带宽， k值为 0.28。据我们所知，这是全硅接收器的首次演示，支持每通道 160 Gb s ^-1的创纪录高传输数据速率，以及低于 -50 dB 的超低电串扰。这种全硅光学 RX 可以与基于异质结的商用 RX 竞争，并有望节省约 40% 的芯片成本，从而为未来光网络实现 >3.2 Tb s ^-1互连铺平道路。