As perovskite photovoltaics stride towards commercialization, reverse bias degradation in shaded cells that must current match illuminated cells is a serious challenge. Previous research has emphasized the role of iodide and silver oxidation, and the role of hole tunnelling from the electron-transport layer into the perovskite to enable the flow of current under reverse bias in causing degradation. Here we show that device architecture engineering has a significant impact on the reverse bias behaviour of perovskite solar cells. By implementing both a ~35-nm-thick conjugated polymer hole transport layer and a more electrochemically stable back electrode, we demonstrate average breakdown voltages exceeding −15 V, comparable to those of silicon cells. Our strategy for increasing the breakdown voltage reduces the number of bypass diodes needed to protect a solar module that is partially shaded, which has been proven to be an effective strategy for silicon solar panels.

随着钙钛矿光伏发电迈向商业化，遮蔽电池中的反向偏压退化是一个严峻的挑战，而遮蔽电池的电流必须与照明电池相匹配。先前的研究强调了碘化物和银氧化的作用，以及从电子传输层到钙钛矿的空穴隧穿的作用，以使电流在反向偏压下流动而导致降解。在这里，我们表明器件架构工程对钙钛矿太阳能电池的反向偏压行为具有重大影响。通过采用约 35 nm 厚的共轭聚合物空穴传输层和电化学更稳定的背电极，我们证明了超过 -15 V 的平均击穿电压，与硅电池的击穿电压相当。我们提高击穿电压的策略减少了保护部分遮蔽的太阳能模块所需的旁路二极管的数量，这已被证明是硅太阳能电池板的有效策略。