Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices,Advanced Functional Materials

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Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2024-08-02 , DOI: 10.1002/adfm.202408542
Adam Erickson ₁ , Syed Qamar Abbas Shah ₂ , Ather Mahmood ₂ , Pratyush Buragohain _{2,

3} , Ilja Fescenko ₄ , Alexei Gruverman ₂ , Christian Binek ₂ , Abdelghani Laraoui _{1,

2}

Affiliation

Chromia (Cr₂O₃) is a magnetoelectric oxide that permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Néel Temperature (T_N ≈307 K) and the need of a symmetry-breaking applied magnetic field to achieve reversal of the Néel vector. Recently, boron (B) doping of Cr₂O₃ films led to an increase T_N >400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, the impact of B doping is directly imaged on the formation of AFM domains in Cr₂O₃ thin films and elucidates the mechanism of voltage-controlled manipulation of the spin structure using nitrogen-vacancy (NV) scanning probe magnetometry. A stark reduction and thickness dependence of domain size in B-doped Cr₂O₃ (B:Cr₂O₃) films is found, explained by the increased germ density, likely associated with the B doping. By reconstructing the surface magnetization from the NV stray-field maps, a qualitative distinction between the undoped and B-doped Cr₂O₃ films is found, manifested by the histogram distribution of the AFM ordering, that is, 180° domains for pure films, and 90° domains for B:Cr₂O₃ films. Additionally, NV imaging of voltage-controlled B-doped Cr₂O₃ devices corroborates the 90° rotation of the AFM domains observed in magnetotransport measurement.

中文翻译：

电压和硼掺杂对反铁磁电 Cr2O3 薄膜和器件自旋反转的局部效应成像

铬氧化物（Cr₂O₃）是一种磁电氧化物，允许对反铁磁（AFM）级进行电压控制，但由于其低 Néel 温度（T_N ≈307 K）并且需要打破对称性的施加磁场来实现 Néel 矢量的反转，因此它受到技术限制。最近，Cr₂O₃ 薄膜的硼（B）掺杂导致 T_N >400 K 的增加，并允许实现电压无磁场控制的 Néel 矢量旋转。在这里，B 掺杂对 Cr₂O₃ 薄膜中 AFM 结构域形成的影响直接成像，并使用氮空位（NV）扫描探针磁力计阐明了自旋结构的电压控制操纵机制。发现 B 掺杂的 Cr₂O₃ （B：Cr₂O₃）薄膜中畴大小的明显减少和厚度依赖性，这可以通过细菌密度增加来解释，这可能与 B 掺杂有关。通过从 NV 杂散场图重建表面磁化强度，发现了未掺杂和 B 掺杂的 Cr₂O₃ 薄膜之间的定性区别，表现为 AFM 排序的直方图分布，即纯薄膜为 180° 域，B：Cr₂O₃ 薄膜为 90° 域。此外，电压控制 B 掺杂 Cr₂O₃ 器件的 NV 成像证实了在磁传输测量中观察到的 AFM 域旋转 90°。

更新日期：2024-08-02

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