当前位置: X-MOL 学术ACS Appl. Mater. Interfaces › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Long-Term Air-Stable n-Channel Organic Thin-Film Transistors Using 2,5-Difluoro-1,4-phenylene-bis{2-[4-(trifluoromethyl)phenyl]acrylonitrile}
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2014-03-12 00:00:00 , DOI: 10.1021/am404549e
Shuichi Nagamatsu 1 , Shinya Oku 2 , Kouji Kuramoto 3 , Tetsuji Moriguchi 3 , Wataru Takashima 4 , Tatsuo Okauchi 3 , Shuzi Hayase 2
Affiliation  

A long-term air-stable n-type organic semiconductor, 2,5-difluoro-1,4-phenylene-bis{2-[4-(trifluoromethyl)phenyl]acrylonitrile}, was synthesized by a high-yield simple procedure of Knoevenagel condensation with aldehyde and acetonitrile derivatives. A fabricated organic thin-film transistor (OTFT) using this compound exhibited good n-channel OTFT properties with a high electron mobility of 0.17 cm2 V–1 s–1 and an on/off current ratio of 106 under both vacuum and ambient air operation. After storage in ambient air for 1 year, a stored n-channel OTFT still shows good n-channel OTFT performance with little degradation in ambient air operation.

中文翻译:

使用2,5-二氟-1,4-亚苯基-双{2- [4- [4-(三氟甲基)苯基]丙烯腈}的长期稳定的n沟道有机薄膜晶体管

通过高产率的简单方法合成了长期稳定的n型有机半导体2,5,2-二氟-1,4-亚苯基-双{2- [4-(4-(三氟甲基)苯基]丙烯腈} Knoevenagel与醛和乙腈衍生物的缩合反应。使用该化合物制成的有机薄膜晶体管(OTFT)具有良好的n沟道OTFT性能,在真空和环境下均具有0.17 cm 2 V –1 s –1的高电子迁移率和10 6的开/关电流比空中操作。在环境空气中存储1年后,存储的n通道OTFT仍显示良好的n通道的OTFT性能,在环境空气操作中几乎不降低性能。
更新日期:2014-03-12
down
wechat
bug