The development of high-performance electronic devices based on two-dimensional (2D) transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of-principle demonstrations to more reproducible integrated devices. It has, in particular, reached a point where the material quality—as well as the interfaces between the metal contacts, dielectrics and 2D semiconductors—must be optimized to increase device performance. Here we examine the key immediate challenges for the development of electronics based on 2D transition metal dichalcogenides, and identify doping, p-type contacts and high-dielectric-constant dielectrics as critical issues. We argue that these challenges stem from the high density of defects present in 2D transition metal dichalcogenides, and suggest that the community focus more on the growth of high-quality materials with a low concentration of defects. We also provide recommendations on identifying industry-compatible dielectrics for these 2D devices.

基于二维 (2D) 过渡金属二硫族化物半导体的高性能电子器件的开发最近已从一次性原理验证演示发展到更具可重复性的集成器件。特别是，它已经达到了必须优化材料质量以及金属触点、电介质和二维半导体之间的界面以提高器件性能的地步。在这里，我们研究了基于二维过渡金属二硫属化物的电子产品开发面临的关键直接挑战，并将掺杂、p 型接触和高介电常数电介质确定为关键问题。我们认为这些挑战源于二维过渡金属二硫属化物中存在的高密度缺陷，并建议业界更多地关注具有低缺陷浓度的高质量材料的生长。我们还提供有关识别这些 2D 器件的行业兼容电介质的建议。