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Mechanism of the Terahertz Wave–MXene Interaction and Surface/Interface Chemistry of MXene for Terahertz Absorption and Shielding
Accounts of Chemical Research ( IF 16.4 ) Pub Date : 2024-07-26 , DOI: 10.1021/acs.accounts.4c00326 Tao Zhao 1 , Hujie Wan 2 , Tianze Zhang 1 , Xu Xiao 1
Accounts of Chemical Research ( IF 16.4 ) Pub Date : 2024-07-26 , DOI: 10.1021/acs.accounts.4c00326 Tao Zhao 1 , Hujie Wan 2 , Tianze Zhang 1 , Xu Xiao 1
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Over the past two decades, terahertz (THz) technology has undergone rapid development, driven by advancements and the growing demand for THz applications across various scientific and technological domains. As the cornerstone of THz technology, strong THz–matter interactions, especially realized as high THz intrinsic absorption in nanometer-thick materials, play a highly important role in various applications including but not limited to THz absorption/shielding, detection, etc. The rigorous electromagnetic theory has posited a maximum intrinsic absorption of 50% for electromagnetic waves by thin films, and the succinct impedance matching condition has also been formulated to guide the design of highly intrinsically absorbing materials. However, these theories face challenges when applied to the THz spectrum with an ultrabroad bandwidth. Existing thin films typically achieve a maximum intrinsic absorption within a narrow frequency range, significantly limiting the performance of THz absorbers and detectors. To date, both theoretical frameworks and experimental solutions are lacking in overcoming the challenge of achieving broadband maximum intrinsic absorption in the THz regime.
中文翻译：
太赫兹波与 MXene 相互作用的机制以及 MXene 太赫兹吸收和屏蔽的表面/界面化学
在过去的二十年里，在各个科学技术领域的进步和对太赫兹应用不断增长的需求的推动下，太赫兹（THz）技术经历了快速发展。作为太赫兹技术的基石，强太赫兹-物质相互作用，特别是在纳米厚材料中实现高太赫兹本征吸收，在各种应用中发挥着非常重要的作用，包括但不限于太赫兹吸收/屏蔽、检测等。电磁理论假设薄膜对电磁波的最大本征吸收率为50%，并制定了简洁的阻抗匹配条件来指导高本征吸收材料的设计。然而，这些理论在应用于超宽带太赫兹频谱时面临挑战。现有的薄膜通常在较窄的频率范围内实现最大本征吸收，这极大地限制了太赫兹吸收器和探测器的性能。迄今为止，理论框架和实验解决方案都缺乏克服在太赫兹范围内实现宽带最大本征吸收的挑战。
更新日期：2024-07-26
中文翻译：
太赫兹波与 MXene 相互作用的机制以及 MXene 太赫兹吸收和屏蔽的表面/界面化学
在过去的二十年里，在各个科学技术领域的进步和对太赫兹应用不断增长的需求的推动下，太赫兹（THz）技术经历了快速发展。作为太赫兹技术的基石，强太赫兹-物质相互作用，特别是在纳米厚材料中实现高太赫兹本征吸收，在各种应用中发挥着非常重要的作用，包括但不限于太赫兹吸收/屏蔽、检测等。电磁理论假设薄膜对电磁波的最大本征吸收率为50%，并制定了简洁的阻抗匹配条件来指导高本征吸收材料的设计。然而，这些理论在应用于超宽带太赫兹频谱时面临挑战。现有的薄膜通常在较窄的频率范围内实现最大本征吸收，这极大地限制了太赫兹吸收器和探测器的性能。迄今为止，理论框架和实验解决方案都缺乏克服在太赫兹范围内实现宽带最大本征吸收的挑战。
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