Additive-Assisted Forming High-Quality Thin Films of Sn–Oxo Cluster for Nanopatterning,ACS Applied Materials & Interfaces

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Additive-Assisted Forming High-Quality Thin Films of Sn–Oxo Cluster for Nanopatterning
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2024-07-24 , DOI: 10.1021/acsami.4c06230
Yingdong Zhao ₁ , Xinyan Huang ₁ , Youming Si ₁ , Lingfeng Zheng ₁ , Hao Chen ₁ , Jun Zhao ₂ , Feng Luo ₃ , Jianhua Zhang ₄ , Pengzhong Chen ₁ , Xiaojun Peng ₁

Affiliation

Recently, metal–oxo clusters (MOCs) have attracted significant interest in fabricating nanoscale patterns in semiconductors via lithography. However, many MOCs are highly crystalline, making it difficult for them to form films and hindering subsequent nanopatterning processes. In this study, we developed a novel and simple method to enhance the film-forming ability of aromatic tetranuclear Sn–oxo clusters by adding additives. Theoretical calculations and Fourier-transform infrared (FTIR) analysis revealed the formation of intermolecular hydrogen bonds between the Sn–oxo clusters and additives, which induced a crystal–gel phase transition at −20 °C, thereby inhibiting the easy crystallization of the Sn–oxo clusters. High-quality and uniform thin films with surface roughness below 0.3 nm were prepared via spin coating. The obtained thin films exhibited good lithographic performance under deep ultraviolet (DUV), electron beam, and extreme-ultraviolet irradiation without a photo acid generator/photoinitiator, and 13- and 21 nm-wide line patterns were obtained on the films via electron-beam and extreme-ultraviolet lithographies. This study will pave the way for the further investigation of novel MOCs for advanced lithography and other thin-film applications.

中文翻译：

用于纳米图案化的添加剂辅助形成高质量 Sn-Oxo 簇薄膜

最近，金属-氧簇（MOC）引起了人们对通过光刻在半导体中制造纳米级图案的极大兴趣。然而，许多MOC具有高度结晶性，这使得它们难以形成薄膜并阻碍后续的纳米图案化过程。在这项研究中，我们开发了一种新颖而简单的方法，通过添加添加剂来增强芳香族四核 Sn-oxo 簇的成膜能力。理论计算和傅里叶变换红外（FTIR）分析表明，Sn-氧簇和添加剂之间形成了分子间氢键，在-20°C诱导了晶体-凝胶相变，从而抑制了Sn-的容易结晶。氧簇。通过旋涂制备了表面粗糙度低于0.3 nm的高质量且均匀的薄膜。所获得的薄膜在深紫外（DUV）、电子束和极紫外照射下表现出良好的光刻性能，无需光酸产生剂/光引发剂，并且通过电子束在薄膜上获得13和21 nm宽的线条图案和极紫外光刻。这项研究将为进一步研究用于先进光刻和其他薄膜应用的新型 MOC 铺平道路。

更新日期：2024-07-24

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