We determined the probabilities of finding diffusing Si atoms in faulted and unfaulted half-unit cells on the Si(111)-(7 × 7) surface. An adsorbed Si atom on the surface at room temperature moved in the half-unit cells. The atom was adsorbed via atom manipulation and located via under-sampled scanning tunneling microscopy. Images of the half-unit cells with the diffusing Si atom and images of the clean surface were superimposed via image processing to calculate differences used to determine the Si atom positions at room temperature. There were different probabilities for Si atom diffusion in faulted and unfaulted half-unit cells.

中文翻译：

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室温下Si(111)-(7×7)半晶胞中单个Si原子扩散的存在概率


我们确定了在 Si(111)-(7 × 7) 表面上有缺陷和无缺陷的半晶胞中发现扩散 Si 原子的概率。室温下表面吸附的硅原子在半晶胞中移动。原子通过原子操纵被吸附，并通过欠采样扫描隧道显微镜定位。通过图像处理将具有扩散硅原子的半晶胞的图像和清洁表面的图像叠加，以计算用于确定室温下硅原子位置的差异。有缺陷和无缺陷的半晶胞中硅原子扩散的概率不同。