Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is the only commercially available nonvolatile memory for storage class memory. Recently, superlattice films of GeTe and Sb2Te3, called interfacial PCM (iPCM), have attracted attention for further increasing the switching speed and reducing energy consumption. It has been reported that the iPCM device exhibits both unipolar- and bipolar-type resistive switching depending on the method of voltage application, and research is being conducted to advance its applications. However, all iPCMs reported thus far have been formed at high temperatures beyond the crystallization temperatures of GeTe and Sb2Te3 using vacuum chambers equipped with a heating stage, making mass production and practical application difficult. Here, we report on fabricated superlattice composed of S-doped GeTe and Sb2Te3 layers by combining room temperature deposition with subsequent two-step annealing. Upon evaluating the performance of this superlattice film as a bipolar-type iPCM, it was found to exhibit characteristics comparable to those of bipolar-type iPCM fabricated from high-temperature deposited superlattices. This technology is expected to contribute to an increase in the throughput of iPCM device manufacturing.

中文翻译：

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用于界面相变存储器的室温生产的硫族化物超晶格


使用由 Ge-Sb-Te 合金组成的硫族化物薄膜的相变存储器 (PCM) 是唯一商用的存储级存储器非易失性存储器。最近，GeTe和Sb2Te3超晶格薄膜，称为界面PCM（iPCM），由于进一步提高开关速度和降低能耗而引起了人们的关注。据报道，iPCM器件根据电压施加的方法表现出单极型和双极型电阻切换，并且正在进行研究以推进其应用。然而，迄今为止报道的所有 iPCM 都是使用配备加热台的真空室在超过 GeTe 和 Sb2Te3 结晶温度的高温下形成的，这使得大规模生产和实际应用变得困难。在这里，我们报告了通过结合室温沉积和随后的两步退火来制造由 S 掺杂的 GeTe 和 Sb2Te3 层组成的超晶格。在评估这种超晶格薄膜作为双极型 iPCM 的性能时，发现它表现出与由高温沉积超晶格制造的双极型 iPCM 相当的特性。该技术预计将有助于提高 iPCM 设备制造的产量。