Pure single crystal diamond is a superior material for electronic, quantum, and detection applications. The state-of-the-art level of background concentrations of boron and nitrogen in such diamonds is about 1 ppb, which is quite close to the detection limit of the best chemical analysis techniques. In this work, we show that the boron concentration of ∼0.1 ppb causes conductivity of ∼5 kΩ cm of the single crystal diamond if the nitrogen concentration is lower. In such a case, the temperature dependent Hall effect measurement provides ∼100 times better detection limit for the concentration of the impurities in diamond compared to the conventional optical techniques. As a result, we have found the background concentrations of boron and nitrogen at the level of 0.07 and 0.02 ppb, respectively. This fact leads to a conclusion that growth of the insulating diamond is possible only when the nitrogen concentration is higher than the boron concentration.

中文翻译：

---

未掺杂 CVD 金刚石中硼和氮背景浓度的霍尔效应分析


纯单晶金刚石是电子、量子和检测应用的优质材料。此类钻石中硼和氮背景浓度的最新水平约为 1 ppb，非常接近最佳化学分析技术的检测限。在这项工作中，我们表明，如果氮浓度较低，约 0.1 ppb 的硼浓度会导致单晶金刚石的电导率达到约 5 kΩ cm。在这种情况下，与传统光学技术相比，温度相关的霍尔效应测量为金刚石中的杂质浓度提供了约 100 倍的检测限。结果，我们发现硼和氮的背景浓度分别为 0.07 和 0.02 ppb。这一事实得出这样的结论：只有当氮浓度高于硼浓度时，绝缘金刚石才有可能生长。