The nanogap resistive switch holds potential as a candidate for nonvolatile memory, although its durability needs enhancement. This study delves into the operational mechanisms through detailed morphological examination during continuous operation of nanogap resistive switches. By developing a finite element model of nanogaps, we reveal the mechanisms behind the formation of electrode surface hillocks and filaments during continuous switching. Our findings suggest that “set” operations include processes such as field evaporation, electric field-induced diffusion, and field-assisted migration within the gap. Conversely, “reset” operations, driven by Joule heating and electromigration, lead to filament breakage and the creation of a fine gap. This research elucidates device degradation issues, such as periodic fluctuations in set threshold voltage (Vset) and the presence of non-steep set curves, providing both theoretical and experimental insights to improve future device performance.

中文翻译：

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纳米间隙电阻开关机理研究及性能退化分析


纳米间隙电阻开关具有作为非易失性存储器的候选者的潜力，尽管其耐用性需要增强。本研究通过对纳米间隙电阻开关连续运行期间的详细形态学检查来深入研究其运行机制。通过开发纳米间隙的有限元模型，我们揭示了连续切换过程中电极表面小丘和细丝形成背后的机制。我们的研究结果表明，“设定”操作包括场蒸发、电场诱导扩散和间隙内场辅助迁移等过程。相反，由焦耳热和电迁移驱动的“重置”操作会导致灯丝断裂并产生细小的间隙。这项研究阐明了器件退化问题，例如设定阈值电压 (Vset) 的周期性波动和非陡峭设定曲线的存在，为提高未来器件性能提供了理论和实验见解。